Dependence of device performance on carrier escape sequence in multi-quantum-well p-i-n solar cells

2006 ◽  
Vol 99 (8) ◽  
pp. 084506 ◽  
Author(s):  
A. Alemu ◽  
J. A. H. Coaquira ◽  
A. Freundlich
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Device Performance ◽  
Carrier Escape ◽  
Multi Quantum Well

Evidence of Sequential Carrier Escape in III-V p-i-n Multi-Quantum Well Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Andenet Alemu ◽  
Jose A. H. Coaquira ◽  
Alex Freundlich
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Potential ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Intensity ◽  
Carrier Escape ◽  
Multi Quantum Well

AbstractSeveral InAsP/InP p-i-n Multi-Quantum Well (MQW) solar cells, only differing by their MQW region composition and geometry, were investigated. For each sample, the Arrhenius plot of the temperature related variation of the photoluminescence intensity was used to deduce the radiative recombination activation energy. The electron and holes confinement energy levels in the quantum wells and the associated effective potential barriers seen by each carrier were theoretically calculated. Carrier escape times were also estimated for each carrier. The fastest escaping carrier is found to display an effective potential energy barrier equal to the experimentally determined photoluminescence activation energy. This not only shows that the temperature related radiative recombination extinction process is driven by the carrier escape mechanism but also that the carriers escape process is sequential. Moreover, a discrepancy in device performance is directly correlated to the nature of the fastest escaping carrier.

Improvement and optimization of InAs[sub x]P[sub 1−x]/InP multi quantum well solar cells

1998 ◽  
Author(s):  
L. Aguilar ◽  
F. Newman ◽  
I. Serdiukova ◽  
C. Monier ◽  
M. F. Vilela ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Multi Quantum Well

Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers

2015 ◽  
Vol 635 ◽  
pp. 82-86 ◽  
Author(s):  
J. Yang ◽  
D.G. Zhao ◽  
D.S. Jiang ◽  
P. Chen ◽  
J.J. Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Photovoltaic Response ◽  
Multi Quantum Well

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

2012 ◽  
Vol 101 (18) ◽  
pp. 181105 ◽  
Author(s):  
J. R. Lang ◽  
N. G. Young ◽  
R. M. Farrell ◽  
Y.-R. Wu ◽  
J. S. Speck
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Barrier Thickness ◽  
Escape Mechanism ◽  
Carrier Escape

Investigation of carrier collection in multi-quantum well solar cells by luminescence spectra analysis

2015 ◽  
Author(s):  
Amaury Delamarre ◽  
Hiromasa Fujii ◽  
Kentaroh Watanabe ◽  
Jean-François Guillemoles ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Luminescence Spectra ◽  
Spectra Analysis ◽  
Carrier Collection ◽  
Multi Quantum Well

A carrier escape study from InP/InGaAs single quantum well solar cells

1998 ◽  
Vol 83 (2) ◽  
pp. 877-881 ◽  
Author(s):  
A. Zachariou ◽  
J. Barnes ◽  
K. W. J. Barnham ◽  
J. Nelson ◽  
E. S. M. Tsui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Escape

scholarly journals A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20585-20592 ◽  
Author(s):  
Ji-Hyeon Park ◽  
R. Nandi ◽  
Jae-Kwan Sim ◽  
Dae-Young Um ◽  
San Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Well ◽  
Quantum Wells ◽  
Cap Layer ◽  
Multi Quantum Well

Solar cells fabricated with hybrid nanowires comprising InGaN/GaN uniaxial and coaxial multi-quantum wells with an InGaN nano-cap layer.

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