Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

2012 ◽  
Vol 101 (18) ◽  
pp. 181105 ◽  
Author(s):  
J. R. Lang ◽  
N. G. Young ◽  
R. M. Farrell ◽  
Y.-R. Wu ◽  
J. S. Speck
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Barrier Thickness ◽  
Escape Mechanism ◽  
Carrier Escape

scholarly journals Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

2020 ◽  
Vol 28 (16) ◽  
pp. 23796
Author(s):  
Yi Chao Chow ◽  
Changmin Lee ◽  
Matthew S. Wong ◽  
Yuh-Renn Wu ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Carrier Escape

Evidence of Sequential Carrier Escape in III-V p-i-n Multi-Quantum Well Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Andenet Alemu ◽  
Jose A. H. Coaquira ◽  
Alex Freundlich
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Potential ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Intensity ◽  
Carrier Escape ◽  
Multi Quantum Well

AbstractSeveral InAsP/InP p-i-n Multi-Quantum Well (MQW) solar cells, only differing by their MQW region composition and geometry, were investigated. For each sample, the Arrhenius plot of the temperature related variation of the photoluminescence intensity was used to deduce the radiative recombination activation energy. The electron and holes confinement energy levels in the quantum wells and the associated effective potential barriers seen by each carrier were theoretically calculated. Carrier escape times were also estimated for each carrier. The fastest escaping carrier is found to display an effective potential energy barrier equal to the experimentally determined photoluminescence activation energy. This not only shows that the temperature related radiative recombination extinction process is driven by the carrier escape mechanism but also that the carriers escape process is sequential. Moreover, a discrepancy in device performance is directly correlated to the nature of the fastest escaping carrier.

A carrier escape study from InP/InGaAs single quantum well solar cells

1998 ◽  
Vol 83 (2) ◽  
pp. 877-881 ◽  
Author(s):  
A. Zachariou ◽  
J. Barnes ◽  
K. W. J. Barnham ◽  
J. Nelson ◽  
E. S. M. Tsui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Escape

Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

2013 ◽  
Vol 103 (3) ◽  
pp. 033901 ◽  
Author(s):  
Sang-Bae Choi ◽  
Jae-Phil Shim ◽  
Dong-Min Kim ◽  
Hoon-Il Jeong ◽  
Young-Dahl Jho ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Indium Composition ◽  
Carrier Escape

Investigation of carrier escape mechanism in InAs/GaAs quantum dot solar cells

2012 ◽  
Author(s):  
Yushuai Dai ◽  
Christopher G. Bailey ◽  
Christopher. Kerestes ◽  
David V. Forbes ◽  
Seth M. Hubbard
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Escape Mechanism ◽  
Quantum Dot Solar Cells ◽  
Gaas Quantum Dot ◽  
Carrier Escape

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

2012 ◽  
Vol 51 ◽  
pp. 10ND10 ◽  
Author(s):  
Noriyuki Watanabe ◽  
Haruki Yokoyama ◽  
Naoteru Shigekawa ◽  
Ken-ichi Sugita ◽  
Akio Yamamoto
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Thickness Dependence ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Photovoltaic Characteristics

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

2012 ◽  
Vol 51 (10S) ◽  
pp. 10ND10 ◽  
Author(s):  
Noriyuki Watanabe ◽  
Haruki Yokoyama ◽  
Naoteru Shigekawa ◽  
Ken-ichi Sugita ◽  
Akio Yamamoto
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Thickness Dependence ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Photovoltaic Characteristics
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