Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

2006 ◽  
Vol 88 (12) ◽  
pp. 121920 ◽  
Author(s):  
Li-Lin Tay ◽  
David J. Lockwood ◽  
Jean-Marc Baribeau ◽  
Mario Noël ◽  
Joanne C. Zwinkels ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Ultrahigh Vacuum ◽  
Vacuum Evaporation ◽  
Silicon Films

CHARACTERIZATION OF ALUMINIUM FILMS DEPOSITED BY ION-BEAM-ASSISTED ULTRAHIGH VACUUM EVAPORATION

1990 ◽  
pp. 963-974
Author(s):  
V. DIETZ ◽  
P. EHRHART ◽  
D. GUGGI ◽  
H.-G. HAUBOLD ◽  
W. JÄGER ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Vacuum Evaporation

Benzohydroxamic Acid on Rutile TiO2(110)-(1×1)– A Comparison of Ultrahigh-Vacuum Evaporation with Deposition from Solution

2021 ◽  
pp. 121955
Author(s):  
Julia Köbl ◽  
Cynthia C. Fernández ◽  
Lisa-Marie Augustin ◽  
Elmar Y. Kataev ◽  
Stefano Franchi ◽  
...  
Keyword(s):  
Ultrahigh Vacuum ◽  
Vacuum Evaporation ◽  
Rutile Tio2 ◽  
Benzohydroxamic Acid

Epitaxial growth of superconducting niobium thin films by ultrahigh vacuum evaporation

1986 ◽  
Vol 4 (3) ◽  
pp. 524-527 ◽  
Author(s):  
S. A. Wolf ◽  
S. B. Qadri ◽  
J. H. Claassen ◽  
T. L. Francavilla ◽  
B. J. Dalrymple
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Ultrahigh Vacuum ◽  
Vacuum Evaporation

Growth of Thick Ge Epilayers on Si(100) Substrates Utilizing Two-Step Approach by Ultrahigh Vacuum Chemical Vapor Deposition

2013 ◽  
Vol 860-863 ◽  
pp. 890-893
Author(s):  
Zhi Wen Zhou ◽  
Yue Zhong Zhang ◽  
Xiao Xia Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Compressive Strain ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Threading Dislocation

Ge epilayers on low temperature (LT) Ge buffer layers were grown by ultrahigh vacuum chemical vapor deposition using the two-step approach. Effects of the growth temperature and the thickness of the low temperature Ge buffers were studied. It was demonstrated that it was unable to obtain flat LT Ge buffers just through lowering the growth temperature due to the ultraslow grow rate that 3D islands formation couldnt be prohibited. However, the rough LT Ge surface was smoothed by subsequent growth at elevated temperature if the LT Ge layer was thick enough and the compressive strain was relaxed largely, and the detrimental Si-Ge intermixing was effectively prohibited as well. When using proper growth conditions for the low temperature Ge buffer, thick Ge epilayer with a low threading dislocation density and a smooth surface was obtained.

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