Numerical studies on the transition of tuned substrate self-bias in a radio-frequency inductively coupled plasma

2006 ◽  
Vol 13 (4) ◽  
pp. 043504 ◽  
Author(s):  
Z. F. Ding ◽  
L. W. Chen ◽  
Y. N. Wang
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Numerical Studies ◽  
Self Bias

The Tuned Substrate Self-bias in a Radio-frequency Inductively Coupled Plasma

2004 ◽  
Vol 6 (6) ◽  
pp. 2549-2558 ◽  
Author(s):  
Ding Zhenfeng ◽  
Huo Weigang ◽  
Wang Younian
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Self Bias

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

1998 ◽  
Vol 510 ◽  
Author(s):  
T. Maeda ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias

AbstractThe effects of Inductively Coupled Plasma (ICP) and Electron Cyclotron Resonance (ECR) H2 plasmas on GaAs metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have been measured as a function of ion flux, ion energy and process pressure. The chemical effects of hydrogenation have been compared to direct physical bombardment by Ar plasmas under the same conditions. Si dopant passivation in MESFETs and HEMTs and C base-dopant passivation in HBTs produces much larger changes in sheet resistance, breakdown voltage and device gain or transconductance than Ar ion bombardment and suggests that H2-containing plasma chemistries (CH4/H2 for semiconductor etching, SiH4 for dielectric deposition, CHF3 for dielectric etching) should be avoided, or at least the exposure of the surface minimized. In some cases the device degradation is less for higher source power conditions, due to the suppression of cathode dc self-bias and hence ion energy.

Comparison of external and internal planar radio frequency antennae for inductively coupled plasma

1997 ◽  
Vol 68 (6) ◽  
pp. 2381-2383 ◽  
Author(s):  
K. Eng ◽  
K. Strohmaier ◽  
R. Palmer ◽  
B. Stoner ◽  
S. Washburn
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

CVD of hard DLC films in a radio frequency inductively coupled plasma source

2001 ◽  
Vol 390 (1-2) ◽  
pp. 98-103 ◽  
Author(s):  
S.J Yu ◽  
Z.F Ding ◽  
J Xu ◽  
J.L Zhang ◽  
T.C Ma
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Inductively Coupled
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