All-organic active matrix flexible display

2006 ◽  
Vol 88 (8) ◽  
pp. 083502 ◽  
Author(s):  
Lisong Zhou ◽  
Alfred Wanga ◽  
Sheng-Chu Wu ◽  
Jie Sun ◽  
Sungkyu Park ◽  
...  
Keyword(s):  
Flexible Display ◽  
Active Matrix

All-organic active matrix OLED flexible display

2006 ◽  
Author(s):  
Lisong Zhou ◽  
Alfred Wanga ◽  
Sheng-Chu Wu ◽  
Jie Sun ◽  
Sungkyu Park ◽  
...  
Keyword(s):  
Flexible Display ◽  
Active Matrix

scholarly journals A prototype active-matrix OLED using graphene anode for flexible display application

2019 ◽  
Vol 21 (1) ◽  
pp. 49-56 ◽  
Author(s):  
O Eun Kwon ◽  
Jin-Wook Shin ◽  
Himchan Oh ◽  
Chan-mo Kang ◽  
Hyunsu Cho ◽  
...  
Keyword(s):  
Flexible Display ◽  
Active Matrix

Characteristics of OTFTs Using Olefin-polymer Gate Insulator and Their Application to a 5-in. OTFT-driven Flexible AMOLED Display

2011 ◽  
Vol 1287 ◽  
Author(s):  
Yoshiki Nakajima ◽  
Yoshihide Fujisaki ◽  
Tatsuya Takei ◽  
Hiroto Sato ◽  
Mitsuru Nakata ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Plastic Film ◽  
Organic Thin Film ◽  
Flexible Display ◽  
Active Matrix ◽  
Organic Light Emitting Diode ◽  
Stable Performance ◽  
Long Channel

ABSTRACTOrganic thin-film transistors (OTFTs) using cross-linked olefin polymer as a gate insulator were fabricated on a plastic film. An olefin polymer layer was formed by spin-coating and baking at temperatures below 150°C. Pentacene was used as an organic semiconductor layer. The fabricated OTFTs with a short 5-μm-long channel showed a mobility of 0.1-0.2 cm2/Vs and a current ON/OFF ratio of 107. These OTFTs also exhibited good stable performance in the atmosphere. On the basis of the results, we fabricated a 5 inches OTFT-driven flexible active-matrix organic light emitting diode (AMOLED) display. The gate insulator, some metal wirings and electrodes on the OTFT backplane were formed on the plastic film by photolithography. After fabrication of the OTFT backplane, OLED layers were formed by vacuum deposition through a shadow-mask. Clear color moving images were observed on the flexible display even when it was bent.

scholarly journals Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics

2020 ◽  
Vol 9 (5) ◽  
pp. 270-273
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Simulation Software ◽  
Active Components ◽  
Large Area ◽  
Silicon Thin Film ◽  
Flexible Display ◽  
Active Matrix

The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

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