scholarly journals Carrier dynamics in α‐Fe2O3 (0001) thin films and single crystals probed by femtosecond transient absorption and reflectivity

2006 ◽  
Vol 99 (5) ◽  
pp. 053521 ◽  
Author(s):  
Alan G. Joly ◽  
Joshua R. Williams ◽  
Scott A. Chambers ◽  
Gang Xiong ◽  
Wayne P. Hess ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Femtosecond Transient Absorption

Visualizing the impact of chloride addition on the microscopic carrier dynamics of MAPbI3 thin films using femtosecond transient absorption microscopy

2019 ◽  
Vol 151 (23) ◽  
pp. 234710 ◽  
Author(s):  
Jin Yu ◽  
Zhongguo Li ◽  
Charles Kolodziej ◽  
Seher Kuyuldar ◽  
Warren S. Warren ◽  
...  
Keyword(s):  
Thin Films ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Femtosecond Transient Absorption ◽  
The Impact

scholarly journals Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Haishuang Lu ◽  
Yu Chen ◽  
Kexin Yang ◽  
Yawei Kuang ◽  
Zhongguo Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonlinear Absorption ◽  
Nonlinear Optical ◽  
Transient Absorption ◽  
Optical Response ◽  
Carrier Dynamics ◽  
Nonlinear Optical Response ◽  
Saturable Absorption ◽  
Gallium Sulfide ◽  
Femtosecond Transient Absorption

Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.

Femtosecond Transient Absorption Spectroscopy in α-sexithienyl thin films

1999 ◽  
Vol 101 (1-3) ◽  
pp. 555-556 ◽  
Author(s):  
G. Wegmann ◽  
R.F. Mahrt ◽  
H. Bässler ◽  
H. Giessen ◽  
M. Murgia ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Transient Absorption ◽  
Transient Absorption Spectroscopy ◽  
Femtosecond Transient Absorption ◽  
Femtosecond Transient Absorption Spectroscopy

scholarly journals Femtosecond Transient Absorption Microscopy of Singlet Exciton Motion in Side-Chain Engineered Perylene-Diimide Thin Films

2020 ◽  
Vol 124 (13) ◽  
pp. 2721-2730 ◽  
Author(s):  
Raj Pandya ◽  
Richard Y. S. Chen ◽  
Qifei Gu ◽  
Jeffrey Gorman ◽  
Florian Auras ◽  
...  
Keyword(s):  
Thin Films ◽  
Transient Absorption ◽  
Perylene Diimide ◽  
Side Chain ◽  
Singlet Exciton ◽  
Femtosecond Transient Absorption

scholarly journals Simplification of femtosecond transient absorption microscopy data from CH3NH3PbI3perovskite thin films into decay associated amplitude maps

2016 ◽  
Vol 27 (11) ◽  
pp. 114002 ◽  
Author(s):  
Benjamin Doughty ◽  
Mary Jane Simpson ◽  
Bin Yang ◽  
Kai Xiao ◽  
Ying-Zhong Ma
Keyword(s):  
Thin Films ◽  
Transient Absorption ◽  
Femtosecond Transient Absorption ◽  
Microscopy Data

Computational modeling of nanosecond time-scale charge carrier dynamics in organic semiconductors

2015 ◽  
Vol 1737 ◽  
Author(s):  
Brian Johnson ◽  
Keshab Paudel ◽  
Oksana Ostroverkhova
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Computational Modeling ◽  
Single Crystals ◽  
Time Scales ◽  
Time Scale ◽  
Carrier Dynamics ◽  
Electron Recombination ◽  
Free Hole ◽  
Charge Carrier Dynamics

ABSTRACTWe present a study of photoinduced charge carrier dynamics in single crystals and polycrystalline thin films of a functionalized fluorinated anthradithiophene (ADT) derivative, ADT-TES-F, combining measurements of time-resolved photocurrent with computational modeling. Simulations revealed two competing charge generation pathways: ultrafast charge separation and nanosecond (ns) time-scale exciton dissociation. Single crystals exhibited significantly enhanced fast charge photogeneration and charge carrier mobilities, as well as lower charge trap densities and free hole-trapped electron recombination, as compared to thin films. At sub-ns time scales after photoexcitation, the light intensity dependence of the photocurrents obtained in single crystals was determined by the carrier density-dependent recombination. At longer time scales, and at lower intensities, taking into account carrier concentration-dependent mobility improved agreement between numerically simulated and experimentally measured photocurrent data.

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