scholarly journals Femtosecond Transient Absorption Microscopy of Singlet Exciton Motion in Side-Chain Engineered Perylene-Diimide Thin Films

2020 ◽  
Vol 124 (13) ◽  
pp. 2721-2730 ◽  
Author(s):  
Raj Pandya ◽  
Richard Y. S. Chen ◽  
Qifei Gu ◽  
Jeffrey Gorman ◽  
Florian Auras ◽  
...  
1999 ◽  
Vol 101 (1-3) ◽  
pp. 555-556 ◽  
Author(s):  
G. Wegmann ◽  
R.F. Mahrt ◽  
H. Bässler ◽  
H. Giessen ◽  
M. Murgia ◽  
...  

ChemPlusChem ◽  
2018 ◽  
Vol 83 (4) ◽  
pp. 230-238 ◽  
Author(s):  
Yaroslav V. Aulin ◽  
Kevin M. Felter ◽  
D. Deniz Günbas ◽  
Rajeev K. Dubey ◽  
Wolter F. Jager ◽  
...  

2018 ◽  
Vol 5 (5) ◽  
pp. 172041 ◽  
Author(s):  
Li Chen ◽  
Mingliang Wu ◽  
Guangwei Shao ◽  
Jiahua Hu ◽  
Guiying He ◽  
...  

Helical perylene diimide-based (hPDI) acceptors have been established as one of the most promising candidates for non-fullerene organic solar cells (OSCs). In this work, we report a novel hPDI-based molecule, hPDI 2 -CN 2 , as an electron acceptor for OSCs. Combining the hPDI 2 -CN 2 with a low-bandgap polymeric donor (PTB7-Th), the blending film morphology exhibited high sensitivity to various treatments (such as thermal annealing and addition of solvent additives), as evidenced by atomic force microscope studies. The power conversion efficiency (PCE) was improved from 1.42% (as-cast device) to 2.76% after thermal annealing, and a PCE of 3.25% was achieved by further addition of 1,8-diiodooctane (DIO). Femtosecond transient absorption (TA) spectroscopy studies revealed that the improved thin-film morphology was highly beneficial for the charge carrier transport and collection. And a combination of fast exciton diffusion rate and the lowest recombination rate contributed to the best performance of the DIO-treated device. This result further suggests that the molecular conformation needs to be taken into account in the design of perylene diimide-based acceptors for OSCs.


2016 ◽  
Vol 27 (11) ◽  
pp. 114002 ◽  
Author(s):  
Benjamin Doughty ◽  
Mary Jane Simpson ◽  
Bin Yang ◽  
Kai Xiao ◽  
Ying-Zhong Ma

2019 ◽  
Vol 151 (23) ◽  
pp. 234710 ◽  
Author(s):  
Jin Yu ◽  
Zhongguo Li ◽  
Charles Kolodziej ◽  
Seher Kuyuldar ◽  
Warren S. Warren ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Wenjun Ni ◽  
Licheng Sun ◽  
Gagik G. Gurzadyan

AbstractSinglet exciton fission (SF) is a spin-allowed process whereby two triplet excitons are created from one singlet exciton. This phenomenon can offset UV photon energy losses and enhance the overall efficiency in photovoltaic devices. For this purpose, it requires photostable commercially available SF materials. Excited state dynamics in pure perylene film, ease of commercial production, is studied by time-resolved fluorescence and femtosecond transient absorption techniques under different photoexcitation energies. In film, polycrystalline regions contain perylene in H-type aggregate form. SF takes place from higher excited states of these aggregates in ultrafast time scale < 30 fs, reaching a triplet formation quantum yield of 108%. Moreover, at λex = 450 nm singlet fission was detected as a result of two-quantum absorption. Other competing relaxation channels are excimer (1 ps) and dimer radical cation formation (< 30 fs). Excimer radiatively relaxes within 19 ns and radical cation recombines in 3.2 ns. Besides, exciton self-trapping by crystal lattice distortions occurs within hundreds of picosecond. Our results highlight potential of simple-fabricated perylene films with similar properties as high-cost single crystal in SF based photovoltaic applications.


2018 ◽  
Vol 122 (15) ◽  
pp. 8589-8601 ◽  
Author(s):  
Valentina Belova ◽  
Benjamin Wagner ◽  
Berthold Reisz ◽  
Clemens Zeiser ◽  
Giuliano Duva ◽  
...  

2021 ◽  
Vol 8 ◽  
Author(s):  
Haishuang Lu ◽  
Yu Chen ◽  
Kexin Yang ◽  
Yawei Kuang ◽  
Zhongguo Li ◽  
...  

Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.


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