Switching rate of magnetoresistive random access memory element: Verifying transition state theory

2006 ◽  
Vol 99 (8) ◽  
pp. 08G106 ◽  
Author(s):  
Shuxia Wang ◽  
P. B. Visscher
Keyword(s):  
Transition State ◽  
Transition State Theory ◽  
Random Access ◽  
Random Access Memory ◽  
State Theory ◽  
Switching Rate ◽  
Access Memory ◽  
Memory Element ◽  
Magnetoresistive Random Access Memory

Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7793-7800 ◽  
Author(s):  
Zhiguang Wang ◽  
Yue Zhang ◽  
Yaojin Wang ◽  
Yanxi Li ◽  
Haosu Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetization Switching ◽  
Magnetoresistive Random Access Memory

Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory

2020 ◽  
Vol 31 (16) ◽  
pp. 165201 ◽  
Author(s):  
A A Rybkina ◽  
A G Rybkin ◽  
I I Klimovskikh ◽  
P N Skirdkov ◽  
K A Zvezdin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Recording Device ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

Magnetoresistive random access memory operation error by thermally activated reversal (invited)

2005 ◽  
Vol 97 (10) ◽  
pp. 10P503 ◽  
Author(s):  
Tetsuya Yamamoto ◽  
Hiroshi Kano ◽  
Yutaka Higo ◽  
Kazuhiro Ohba ◽  
Tetsuya Mizuguchi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermally Activated ◽  
Magnetoresistive Random Access Memory

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

MRS Bulletin ◽  
2004 ◽  
Vol 29 (11) ◽  
pp. 818-821 ◽  
Author(s):  
G. Grynkewich ◽  
J. Åkerman ◽  
P. Brown ◽  
B. Butcher ◽  
R.W. Dave ◽  
...  
Keyword(s):  
Flash Memory ◽  
High Speed ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory ◽  
Static Ram ◽  
New Memory Technology

AbstractMagnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.

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