Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

2002 ◽  
Vol 80 (13) ◽  
pp. 2335-2337 ◽  
Author(s):  
N. D. Rizzo ◽  
M. DeHerrera ◽  
J. Janesky ◽  
B. Engel ◽  
J. Slaughter ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermally Activated ◽  
Magnetoresistive Random Access Memory

Magnetoresistive random access memory using magnetic tunnel junctions

2003 ◽  
Vol 91 (5) ◽  
pp. 703-714 ◽  
Author(s):  
S. Tehrani ◽  
J.M. Slaughter ◽  
M. Deherrera ◽  
B.N. Engel ◽  
N.D. Rizzo ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

Magnetoresistive random access memory operation error by thermally activated reversal (invited)

2005 ◽  
Vol 97 (10) ◽  
pp. 10P503 ◽  
Author(s):  
Tetsuya Yamamoto ◽  
Hiroshi Kano ◽  
Yutaka Higo ◽  
Kazuhiro Ohba ◽  
Tetsuya Mizuguchi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermally Activated ◽  
Magnetoresistive Random Access Memory

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Current Status ◽  
Access Memory ◽  
Magnetic Random Access Memory

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

Sign in / Sign up

Export Citation Format

Share Document