scholarly journals Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence

2006 ◽  
Vol 88 (9) ◽  
pp. 091912 ◽  
Author(s):  
N. Mizuochi ◽  
H. Watanabe ◽  
H. Okushi ◽  
S. Yamasaki ◽  
J. Niitsuma ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Paramagnetic Resonance ◽  
Related Defect ◽  
Hydrogen Vacancy ◽  
Electron Paramagnetic

Electron Paramagnetic Resonance Studies of Intrinsic Bonding Defects and Impurities in SiO2 Thin Solid Films

1985 ◽  
Vol 61 ◽  
Author(s):  
Robert N. Schwartz ◽  
Marion D. Clark ◽  
Walee Chamulitrat ◽  
Larry Kevan
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Pressure Chemical ◽  
Defects And Impurities ◽  
Electron Paramagnetic

ABSTRACTElectron paramagnetic resonance (EPR) spectroscopy has been used to identify paramagnetic intrinsic bonding defects and impurities in as-deposited thin solid SiO2 films. Thin films grown by E-beam vacuum deposition, RF sputtering, thermal oxidation of polysilicon, plasma enhanced chemical vapor deposition (PECVD), and low pressure chemical vapor deposition (LPCVD) techniques have been examined. Some of the growth techniques yield films that have paramagnetic centers similar to those found in bulk radiation-damaged vitreous SiO2. A new temperature dependent EPR center was observed in PECVD SiO2 films and has been assigned to trapped NO2. Slow-motional EPR lineshape theory was used to analyze the temperature dependent spectra.

Intrinsic Defects in HPSI 6H-SiC: an EPR Study

2008 ◽  
Vol 600-603 ◽  
pp. 381-384 ◽  
Author(s):  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Björn Magnusson ◽  
Anne Henry ◽  
Erik Janzén
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Vapor Deposition ◽  
Thermal Activation ◽  
Chemical Vapor ◽  
Paramagnetic Resonance ◽  
Intrinsic Defects ◽  
Annealing Behavior ◽  
Carbon Vacancy ◽  
The Stability ◽  
Electron Paramagnetic

High-purity, semi-insulating 6H-SiC substrates grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). The carbon vacancy (VC), the carbon vacancy-antisite pair (VCCSi) and the divacancy (VCVSi) were found to be prominent defects. The (+|0) level of VC in 6H-SiC is estimated by photoexcitation EPR (photo-EPR) to be at ~ 1.47 eV above the valence band. The thermal activation energies as determined from the temperature dependence of the resistivity, Ea~0.6-0.7 eV and ~1.0-1.2 eV, were observed for two sets of samples and were suggested to be related to acceptor levels of VC, VCCSi and VCVSi. The annealing behavior of the intrinsic defects and the stability of the SI properties were studied up to 1600°C.

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

2012 ◽  
Vol 717-720 ◽  
pp. 217-220 ◽  
Author(s):  
Nguyen Tien Son ◽  
Viktor Ivády ◽  
Adam Gali ◽  
Andreas Gällström ◽  
Stefano Leone ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
High Temperature ◽  
Ab Initio ◽  
Electron Spin ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Paramagnetic Resonance ◽  
Form Complex ◽  
Electron Paramagnetic ◽  
Neutral Charge State

In unintentionally Nb-doped 4H-SiC grown by high-temperature chemical vapor deposition (HTCVD), an electron paramagnetic resonance (EPR) center with C1h symmetry and an electron spin S=1/2 was observed. The spectrum shows a hyperfine structure consisting of ten equal-intensity hyperfine (hf) lines which is identified as due to the hf interaction between the electron spin and the nuclear spin of 93Nb. An additional hf structure due to the interaction with two equivalent Si neighbors was also observed. Ab initio supercell calculations of Nb in 4H-SiC suggest that Nb may form complex with a C-vacancy (VC) resulting in an asymmetric split-vacancy (ASV) defect, NbSi-VC. Combining results from EPR and supercell calculations, we assign the observed Nb-related EPR center to the hexagonal-hexagonal configuration of the AVS defect in the neutral charge state, (NbSi-VC)0.

Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition

2007 ◽  
Vol 556-557 ◽  
pp. 473-476 ◽  
Author(s):  
Mary Ellen Zvanut ◽  
Hun Jae Chung ◽  
A.Y. Polyakov ◽  
Marek Skowronski
Keyword(s):  
Chemical Vapor Deposition ◽  
Point Defects ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Active Centers ◽  
Paramagnetic Resonance ◽  
Defect Levels ◽  
Electron Paramagnetic ◽  
Additional Hyperfine

Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining the purity afforded by a CVD process. While several shallow and deep defect levels have been identified in 6H HCVD substrates using electrical techniques, here we examine several different point defects found in 4H n-type HCVD SiC using electron paramagnetic resonance (EPR) spectroscopy. One spectrum, which exhibits axial symmetry and broadens upon heating, may represent a collection of shallow defects. The other prominent defect has the g tensor of the negatively charged carbon vacancy, but additional hyperfine lines suggest a more complex center. The role of these defects is not yet determined, but we note that the concentrations are similar to those found for the electrically detected defect levels, making them a reasonable source of electrically active centers.

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