L10 FePt–MgO perpendicular thin film deposited by alternating sputtering at elevated temperature

2006 ◽  
Vol 99 (8) ◽  
pp. 08F907 ◽  
Author(s):  
Yingguo Peng ◽  
Jian-Gang Zhu ◽  
David E. Laughlin
Keyword(s):  
Thin Film ◽  
Elevated Temperature

Electromigration in metals

1977 ◽  
Vol 55 (2) ◽  
pp. 103-115 ◽  
Author(s):  
S. T. Pai ◽  
J. P. Marton
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Elevated Temperature ◽  
Temperature Gradient ◽  
Electrostatic Force ◽  
Electrical Current ◽  
Net Migration ◽  
Sample Position ◽  
Hole Current ◽  
Reversal Temperature

In bulk and thin film metal samples, a net migration of material may take place when electrical current is passed through the sample at an elevated temperature. The migration is due to the passage of electron (or hole) current, the electrostatic force on the metal ions, and the temperature gradient in the sample. The extent and the direction of net migration has not been predicted satisfactorily by existing theories, leaving many unexplained anomalous experimental results. The present work is the development of a generalized theory that contains the main features of previous theories. It can explain all major experimental observations. Its main features include predictions on the temperature and time dependence of migration, its direction, its reversal temperature, and the approximate sample position that is affected most. The theory has been used to interpret available experimental data on a number of electron- and hole-type metals.

scholarly journals Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

2007 ◽  
Vol 90 (22) ◽  
pp. 222902 ◽  
Author(s):  
Z. X. Cheng ◽  
X. L. Wang ◽  
S. X. Dou ◽  
K. Ozawa ◽  
H. Kimura
Keyword(s):  
Thin Film ◽  
Elevated Temperature ◽  
Ferroelectric Properties

Ion Irradiation Induced Metastable Phase Formation in the Al-Zr System

1986 ◽  
Vol 74 ◽  
Author(s):  
David A. Lilienfeld ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Elevated Temperature ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Ion Irradiation ◽  
Metastable Phase ◽  
Metastable Solid Solution ◽  
Metastable Phase Formation

AbstractThe Al-Zr system was investigated in an effort to form quasicrystals. While no quasicrystals were found, a metastable phase previously formed only by annealing of a metastable solid solution was observed. This phase was formed by thermal annealing or by elevated temperature ion irradiations of thin film specimens. This work is the first observation of ion irradiation induced formation of this metastable phase.

Cycling-induced degradation of LiCoO2 thin-film cathodes at elevated temperature

2006 ◽  
Vol 51 (15) ◽  
pp. 3001-3007 ◽  
Author(s):  
J.S. Van Sluytman ◽  
W.C. West ◽  
J.F. Whitacre ◽  
F.M. Alamgir ◽  
S.G. Greenbaum
Keyword(s):  
Thin Film ◽  
Elevated Temperature

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

2015 ◽  
Vol 8 (6) ◽  
pp. 061303 ◽  
Author(s):  
Toan Dinh ◽  
Dzung Viet Dao ◽  
Hoang-Phuong Phan ◽  
Li Wang ◽  
Afzaal Qamar ◽  
...  
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Silicon Carbide ◽  
Elevated Temperature ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide
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