Electromigration in Gold and Single Crystalline Silver Nanowires

Author(s):  
B. Stahlmecke
2010 ◽  
Vol 25 (2) ◽  
pp. 383-390 ◽  
Author(s):  
Biswajit Mondal ◽  
Dipanwita Majumdar ◽  
Shyamal K. Saha

The synthesis of single crystalline rectangular silver bar using polyacrylamide (PAM) and silver nitrate (AgNO3) by a hydrothermal process is reported. PAM has been used to create a reducing atmosphere as well as nucleation sites to produce silver seeds along the PAM chain. Several silver nanostructures viz. nanoparticles, growth of silver nanowires, and finally a single crystalline silver nanobar with a square cross section and of several microns in length, depending upon maturity and temperature of the hydrosol, are synthesized. At relatively lower temperatures (above 380 K) and higher pressure amide group of PAM is hydrolyzed with the liberation of ammonia (NH3), which produces a reducing atmosphere. As a result, the degraded PAM chain acts as nucleation sites to produce the assembly of silver nanocrystals along the chain. As the hydrosol becomes more and more mature, a directional growth of silver nanocrystals, called a mesocrystal, is formed. This mesocrystal is converted into single crystals due to fusion of higher energy surfaces (100) of nanocrystals to minimize the total surface energy. This growth process is completed with the formation of a single crystalline rectangular silver bar with a square cross section due to the growth of silver along the [110] direction.


2006 ◽  
Vol 88 (5) ◽  
pp. 053122 ◽  
Author(s):  
B. Stahlmecke ◽  
F.-J. Meyer zu Heringdorf ◽  
L. I. Chelaru ◽  
M. Horn-von Hoegen ◽  
G. Dumpich ◽  
...  

Author(s):  
Joseph D. C. Peng

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.


2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

2014 ◽  
Vol 29 (11) ◽  
pp. 1199
Author(s):  
LI Xiao-Shuai ◽  
WANG Zeng-Mei ◽  
ZHU Ming-Fang ◽  
WANG Shan-Peng ◽  
TAO Xu-Tang ◽  
...  
Keyword(s):  

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


Author(s):  
Frank Bergner ◽  
Michael Schaper ◽  
Ralf Hammer ◽  
Manfred Jurisch ◽  
Andre Kleinwechter ◽  
...  

1991 ◽  
Author(s):  
David E. Luzzi ◽  
David P. Pope ◽  
Vaclay Vitek

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