scholarly journals Band gap renormalization and carrier localization effects in InGaN∕GaN quantum-wells light emitting diodes with Si doped barriers

2006 ◽  
Vol 88 (4) ◽  
pp. 041903 ◽  
Author(s):  
Y. J. Wang ◽  
S. J. Xu ◽  
Q. Li ◽  
D. G. Zhao ◽  
H. Yang
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Carrier Localization ◽  
Light Emitting ◽  
Si Doped

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Systematical and Numerical Investigations on InGaN-Based Green Light-Emitting Diodes: Si-Doped Quantum Barriers, Engineered p-Electron Blocking Layer and AlGaN/GaN Structured p-Type Region

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Tie Li ◽  
Guan-Long Cao ◽  
Hong-Juan Xie ◽  
Jing-Qin Wang ◽  
Zi-Hui Zhang
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Light Emitting Diodes ◽  
Hole Concentration ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Si Doped ◽  
P Type

Abstract Here, we numerically prove that the severe polarization-induced electric field in the active region for [0001]-oriented InGaN-based green light-emitting diodes (LEDs) is reduced when heavily Si-doped GaN quantum barriers are adopted. However, the electron injection is accordingly sacrificed for the insufficient confinement capability of the p-type electron blocking layer (p-EBL). Hence, p-EBL structures with/without gradient AlN alloys are discussed to reduce the electron leakage, and the importance of the positive sheet polarization charges at the interface between the last quantum barrier (LQB) and the p-EBL on affecting the blocking barrier height for electrons is especially highlighted. Moreover, we also suggest utilizing specially designed p-AlGaN/p-GaN structure instead of p-GaN structure to serve as the p-type hole supplier, which is able to increase the kinetic energy of holes, thus assisting holes to overcome the energy band barrier height in p-EBL and increasing the hole concentration within the quantum wells.

scholarly journals Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Hyun Jeong ◽  
Hyeon Jun Jeong ◽  
Hye Min Oh ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Thermal stability of Si-doped InGaN multiple-quantum wells for high efficiency light emitting diodes

2010 ◽  
Vol 108 (10) ◽  
pp. 102813 ◽  
Author(s):  
Sung-Nam Lee ◽  
Jihoon Kim ◽  
Kyoung-Kook Kim ◽  
Hyunsoo Kim ◽  
Han-Ki Kim
Keyword(s):  
Thermal Stability ◽  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Si Doped ◽  
Thermal Stability Of

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells
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