Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth

2006 ◽  
Vol 99 (2) ◽  
pp. 023507 ◽  
Author(s):  
A. H. Mahan ◽  
B. Roy ◽  
R. C. Reedy ◽  
D. W. Readey ◽  
D. S. Ginley
Keyword(s):  
Surface Morphology ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystallization Kinetics ◽  
Hydrogen Content ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Chemical Vapor Deposited

Rapid thermal annealing effects on the properties of plasma‐enhanced chemical vapor deposited tungsten films

1991 ◽  
Vol 70 (4) ◽  
pp. 2366-2369 ◽  
Author(s):  
Jong‐Sung Hong ◽  
Yong Tae Kim ◽  
Suk‐Ki Min ◽  
Tae Won Kang ◽  
Chi Yhou Hong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Annealing Effects

Rapid Thermal Annealing of Amorphous Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Pei-Yi Lin ◽  
Ping-Jung Wu ◽  
I-Chen Chen
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor

AbstractHydrogenated amorphous silicon (a-Si:H) thin films were deposited on pre-oxidized Si wafers by electron cyclotron resonance chemical vapor deposition (ECRCVD). The rapid thermal annealing (RTA) treatments were applied to the as-grown samples in nitrogen atmosphere, and the temperature range for the RTA process is from 450 to 950 °C. The crystallization and grain growth behaviors of the annealed films were investigated by Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The onset temperature for the crystallization and grain growth is around 625 ∼ 650°C. The crystalline fraction of annealed a-Si:H films can reach ∼80%, and a grain size up to 17 nm could be obtained from the RTA treatment at 700 °C. We found that the crystallization continues when the grain growth has stopped.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Susceptor and Proximity Rapid Thermal Annealing of InP

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
S. J. Pearton ◽  
M. Geva
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Substrate Surface ◽  
Effective Surface ◽  
Group V ◽  
Surface Protection ◽  
Pit Formation ◽  
Annealing Cycle ◽  
Inp Substrates

ABSTRACTAn intensive comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology, was carried out. The superiority of annealing within a susccptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750°C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration.

Sign in / Sign up

Export Citation Format

Share Document