Thermal conduction in ultrathin pure and doped single-crystal silicon layers at high temperatures

2005 ◽  
Vol 98 (12) ◽  
pp. 123523 ◽  
Author(s):  
Wenjun Liu ◽  
Mehdi Asheghi
Keyword(s):  
Single Crystal ◽  
High Temperatures ◽  
Thermal Conduction ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Thermal Conductivity of Ultra Thin Single Crystal Silicon Layers: Part II — Experimental Data and Modeling at High Temperatures

2004 ◽  
Author(s):  
Wenjun Liu ◽  
Mehdi Asheghi ◽  
K. E. Goodson
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
Single Crystal ◽  
High Temperatures ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Boltzmann Transport ◽  
Crystal Silicon ◽  
Strained Si

Simulations of the temperature field in Silicon-on-Insulator (SOI) and strained-Si transistors can benefit from experimental data and modeling of the thin silicon layer thermal conductivity at high temperatures. This work presents the first experimental data for 20 and 100 nm thick single crystal silicon layers at high temperatures and develops algebraic expressions to account for the reduction in thermal conductivity due to the phonon-boundary scattering for pure and doped silicon layers. The model applies to temperatures range 300–1000 K for silicon layer thicknesses from 10 nm to 1 μm (and even bulk) and agrees well with the experimental data. In addition, the model has an excellent agreement with the predictions of thin film thermal conductivity based on thermal conductivity integral and Boltzmann transport equation, although it is significantly more robust and convenient for integration into device simulators. The experimental data and predictions are required for accurate thermal simulation of the semiconductor devices, nanostructures and in particular the SOI and strained-Si transistors.

Thermal conduction in doped single-crystal silicon films

2002 ◽  
Vol 91 (8) ◽  
pp. 5079-5088 ◽  
Author(s):  
M. Asheghi ◽  
K. Kurabayashi ◽  
R. Kasnavi ◽  
K. E. Goodson
Keyword(s):  
Single Crystal ◽  
Thermal Conduction ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Crystal Silicon

scholarly journals Fracture Toughness of Single Crystal Silicon at High Temperatures.

1992 ◽  
Vol 41 (463) ◽  
pp. 488-494 ◽  
Author(s):  
Kunio HAYASHI ◽  
Shinji TSUJIMOTO ◽  
Yasunori OKAMOTO ◽  
Tomozo NISHIKAWA
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
High Temperatures ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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