Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

2005 ◽  
Vol 87 (9) ◽  
pp. 092104 ◽  
Author(s):  
S. Hosokawa ◽  
D. Navarro ◽  
M. Miura-Mattausch ◽  
H. J. Mattausch ◽  
T. Ohguro ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Voltage Dependence ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length ◽  
Drain Voltage

scholarly journals Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

2017 ◽  
Vol 16 (1) ◽  
pp. 69-74
Author(s):  
Md Iktiham Bin Taher ◽  
Md. Tanvir Hasan
Keyword(s):  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Gate Length ◽  
Drain Voltage ◽  
Switching Device ◽  
Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

2002 ◽  
Vol 92 (9) ◽  
pp. 5228-5232 ◽  
Author(s):  
S. Matsumoto ◽  
K. Hisamitsu ◽  
M. Tanaka ◽  
H. Ueno ◽  
M. Miura-Mattausch ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length
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