Boron distribution in silicon after multiple pulse excimer laser annealing

2005 ◽  
Vol 87 (8) ◽  
pp. 081901 ◽  
Author(s):  
E. V. Monakhov ◽  
B. G. Svensson ◽  
M. K. Linnarsson ◽  
A. La Magna ◽  
M. Italia ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Multiple Pulse ◽  
Pulse Excimer Laser ◽  
Boron Distribution

Boron distribution in silicon after excimer laser annealing with multiple pulses

2005 ◽  
Vol 124-125 ◽  
pp. 228-231 ◽  
Author(s):  
E.V. Monakhov ◽  
B.G. Svensson ◽  
M.K. Linnarsson ◽  
A. La Magna ◽  
M. Italia ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Multiple Pulses ◽  
Boron Distribution

Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Winer ◽  
R.Z. Bachrach ◽  
R.I. Johnson ◽  
S.E. Ready ◽  
G.B. Anderson ◽  
...  
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Near Surface ◽  
Pulse Excimer Laser ◽  
Fast Pulse

AbstractThe effects of fast-pulse excimer laser annealing of a-Si:H were investigated by measurements of electronic transport properties and impurity concentration depth profiles as a function of incident laser energy density. The dc dark conductivity of laser-annealed, highly-doped a-Si:H increases by a factor of ∼350 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration and which correlates with the onset of hydrogen evolution from and crystallization of the near-surface layer. The similarities between the preparation and properties of laser-crystallized a-Si:H and pc-Si:H are discussed.

Extended-pulse excimer laser annealing of Pb(Zr1−xTix)O3 thin film on LaNiO3 electrode

2004 ◽  
Vol 96 (5) ◽  
pp. 2779-2784 ◽  
Author(s):  
S. C. Lai ◽  
Hang-Ting Lue ◽  
K. Y. Hsieh ◽  
S. L. Lung ◽  
Rich Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pulse Excimer Laser ◽  
Lanio3 Electrode

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Reduction of the size of the implanted silver nanoparticles in float glass during excimer laser annealing

1998 ◽  
Vol 136 (4) ◽  
pp. 298-305 ◽  
Author(s):  
A.L Stepanov ◽  
D.E Hole ◽  
A.A Bukharaev ◽  
P.D Townsend ◽  
N.I Nurgazizov
Keyword(s):  
Silver Nanoparticles ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Float Glass ◽  
Excimer Laser Annealing

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Sign in / Sign up

Export Citation Format

Share Document