Structural characterization of zincblende Ga1−xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

2005 ◽  
Vol 87 (3) ◽  
pp. 031902 ◽  
Author(s):  
M. W. Fay ◽  
Y. Han ◽  
P. D. Brown ◽  
S. V. Novikov ◽  
K. W. Edmonds ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Gaas Substrates

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers

1998 ◽  
Vol 84 (3) ◽  
pp. 1551-1557 ◽  
Author(s):  
J. Luyo-Alvarado ◽  
M. Meléndez-Lira ◽  
M. López-López ◽  
I. Hernández-Calderón ◽  
M. E. Constantino ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 812-816 ◽  
Author(s):  
Yoshikatsu Ichimura ◽  
Katsumi Kishino ◽  
Mitsunari Satake ◽  
Masaru Kuramoto ◽  
Atsushi Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Compound System ◽  
Gaas Substrates

Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3869-3871 ◽  
Author(s):  
B. Yang ◽  
A. Trampert ◽  
B. Jenichen ◽  
O. Brandt ◽  
K. H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam

Structural characterization of Si0.7Ge0.3layers grown on Si(001) substrates by molecular beam epitaxy

1997 ◽  
Vol 81 (1) ◽  
pp. 199-204 ◽  
Author(s):  
T. Obata ◽  
K. Komeda ◽  
T. Nakao ◽  
H. Ueba ◽  
C. Tatsuyama
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Sign in / Sign up

Export Citation Format

Share Document