The Impact Of Soft-Optical Phonon Scattering Due To High-κ Dielectrics On The Performance Of Sub-100nm Conventional And Strained Si n-MOSFETs

2005 ◽  
Author(s):  
L. Yang
1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
B. L. Gelmont ◽  
...  

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.


ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3278-3283 ◽  
Author(s):  
Jingzhi Shang ◽  
Ting Yu ◽  
Jianyi Lin ◽  
Gagik G. Gurzadyan

2013 ◽  
Vol 82 (9) ◽  
pp. 094606 ◽  
Author(s):  
Zi-Wu Wang ◽  
Lei Liu ◽  
Lin Shi ◽  
Xiao-Jing Gong ◽  
Wei-Ping Li ◽  
...  

2000 ◽  
Vol 114 (2) ◽  
pp. 101-106 ◽  
Author(s):  
Wenhui Duan ◽  
Jia-Lin Zhu ◽  
Bing-Lin Gu ◽  
Jian Wu

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