The Free Exciton Binding Energy in a Strained GaN0.02As0.98 Layer

2005 ◽  
Author(s):  
R. Kudrawiec
Keyword(s):  
Binding Energy ◽  
Free Exciton ◽  
Exciton Binding Energy

Nanocrystalline Silicon for Optoelectronic Applications

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 33-38 ◽  
Author(s):  
Leonid Tsybeskov
Keyword(s):  
Binding Energy ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Free Exciton ◽  
Nanocrystalline Silicon ◽  
Momentum Conservation ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Energy Plus ◽  
Hole Recombination

Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy

2001 ◽  
Vol 353-356 ◽  
pp. 405-408 ◽  
Author(s):  
Ivan G. Ivanov ◽  
T. Egilsson ◽  
Jie Zhang ◽  
Alexsandre Ellison ◽  
Erik Janzén
Keyword(s):  
Binding Energy ◽  
Free Exciton ◽  
Exciton Binding Energy

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

2002 ◽  
Vol 389-393 ◽  
pp. 613-616 ◽  
Author(s):  
Ivan G. Ivanov ◽  
Jie Zhang ◽  
L. Storasta ◽  
Erik Janzén
Keyword(s):  
Binding Energy ◽  
Free Exciton ◽  
Exciton Binding Energy

Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers

2013 ◽  
Vol 103 (25) ◽  
pp. 251908 ◽  
Author(s):  
M. Wełna ◽  
R. Kudrawiec ◽  
A. Kaminska ◽  
A. Kozanecki ◽  
B. Laumer ◽  
...  
Keyword(s):  
Binding Energy ◽  
Free Exciton ◽  
Exciton Binding Energy

Free Exciton Binding Energy in Strained GexSi1−x/Si Quantum Wells

1995 ◽  
Vol 189 (2) ◽  
pp. K45-K47
Author(s):  
W. Z. Shen ◽  
W. G. Tang ◽  
S. C. Shen
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Free Exciton ◽  
Exciton Binding Energy

Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
B. J. Skromme ◽  
H. Zhao ◽  
B. Goldenberg ◽  
H. S. Kong ◽  
M. T. Leonard ◽  
...  
Keyword(s):  
Binding Energy ◽  
Molecular Beam ◽  
Free Exciton ◽  
Chemical Vapor ◽  
Exciton Binding Energy ◽  
Exciton Peak ◽  
Neutral Donor ◽  
Gas Source ◽  
Donor Binding Energy ◽  
First Time

ABSTRACTWe report several new aspects of the excitonic properties of heteroepitaxial GaN grown on sapphire or 6H-SiC. In particular, we observed the n = 2 free exciton associated with both A and B excitons (which are distinct from the n = 1 C exciton) using reflectance and 1.7 K photoluminescence. We also studied the behavior of the n = 2 A-exciton using magnetoluminescence in fields up to 12 T. The large diamagnetic shift and splitting positively confirm the identification, yielding an exciton binding energy of about 26.4 meV. Several previous identifications of the n = 2 free exciton yielding a smaller exciton binding energy are probably in error, based on our results. We have also detected the two-electron replica of the neutral donor-bound exciton for the first time in GaN and observed its splitting pattern in magnetic fields up to 12 T. This feature is 22 meV below the principal neutral donor-bound exciton peak, independently of strain shifts in the overall spectrum. It yields a precise donor binding energy of 29 meV for the shallow residual donor in material grown by metalorganic chemical vapor deposition and gas-source molecular beam epitaxy, considerably smaller than that of the residual donor reported earlier in hydride vapor phase epitaxial material (about 35.5 meV).

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