scholarly journals Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

2002 ◽  
Vol 81 (16) ◽  
pp. 2959-2961 ◽  
Author(s):  
S. J. Xu ◽  
W. Liu ◽  
M. F. Li
Keyword(s):  
Binding Energy ◽  
Free Exciton ◽  
Direct Determination ◽  
Exciton Binding Energy ◽  
Luminescence Spectra

Nanocrystalline Silicon for Optoelectronic Applications

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 33-38 ◽  
Author(s):  
Leonid Tsybeskov
Keyword(s):  
Binding Energy ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Free Exciton ◽  
Nanocrystalline Silicon ◽  
Momentum Conservation ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Energy Plus ◽  
Hole Recombination

Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

scholarly journals Photoluminescence of 8H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 347-350 ◽  
Author(s):  
Anne Henry ◽  
Ivan G. Ivanov ◽  
Erik Janzén ◽  
Tomoaki Hatayama ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Binding Energy ◽  
Low Temperature ◽  
Band Gap ◽  
Free Exciton ◽  
Photoluminescence Spectroscopy ◽  
Ionization Energies ◽  
Nitrogen Levels ◽  
Excitonic Band ◽  
Exciton Recombination

8H-SiC epilayers grown on small 8H-SiC Lely platelets are investigated optically using photoluminescence spectroscopy. At low temperature the near band gap emission detected in the 2.78 to 2.67 eV range contains sharp lines associated to nitrogen-bound-exciton recombination. Three different no-phonon lines are detected accompanied by their phonon replicas. Free-exciton replicas are also observed which allows the determination of the excitonic band gap. The binding energy of the bound excitons can thus be determined and the ionization energies of the three nitrogen levels in 8H-SiC are estimated and found to be rather shallow compared to the values for other hexagonal polytypes. Additional bound-exciton lines are observed when the experimental photoluminescence temperature is increased.

Magneto-optical determination of the exciton binding energy in GaAs quantum wells

1986 ◽  
Vol 174 (1-3) ◽  
pp. A433
Author(s):  
W. Ossau ◽  
B. Jäkel ◽  
E. Bangert ◽  
G. Landwehr ◽  
G. Weimann
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Exciton Binding Energy ◽  
Optical Determination

scholarly journals Magneto-optical determination of exciton binding energy in GaAs-Ga1−xAlxAsquantum wells

1984 ◽  
Vol 30 (4) ◽  
pp. 2253-2256 ◽  
Author(s):  
J. C. Maan ◽  
G. Belle ◽  
A. Fasolino ◽  
M. Altarelli ◽  
K. Ploog
Keyword(s):  
Binding Energy ◽  
Exciton Binding Energy ◽  
Optical Determination
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