Electron-hole dynamics in GaN under short-pulse laser excitation

Author(s):  
Yang Wang
2014 ◽  
Vol 117 (1) ◽  
pp. 7-12 ◽  
Author(s):  
K. Wædegaard ◽  
D. B. Sandkamm ◽  
L. Haahr-Lillevang ◽  
K. G. Bay ◽  
Peter Balling

2015 ◽  
Vol 120 (4) ◽  
pp. 1221-1227 ◽  
Author(s):  
L. Haahr-Lillevang ◽  
K. Wædegaard ◽  
D. B. Sandkamm ◽  
A. Mouskeftaras ◽  
S. Guizard ◽  
...  

2003 ◽  
Vol 803 ◽  
Author(s):  
Bérangère Hyot ◽  
Ludovic Poupinet ◽  
Pierre Desré

ABSTRACTFuture development of erasable phase change recording requires a thorough understanding of the fundamental mechanisms involved in crystallization processes to be able to forecast the behavior of a new material or to guide its optimization when submitted to specific conditions. In this paper, we emphasize that a predictive simulation is valuable only if a good modeling and accurate values of the involved parameters are used. We will present the main characteristics of our phase change model (effect of the short-pulse laser excitation, chemical influence of the materials in contact with the PC layer, stabilization of the amorphous state for very thin film layers) and we will discuss experimental and simulated crystallization behaviors.


Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

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