scholarly journals Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

2005 ◽  
Vol 86 (24) ◽  
pp. 241108 ◽  
Author(s):  
Ya. I. Alivov ◽  
Ü. Özgür ◽  
S. Doğan ◽  
D. Johnstone ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heterojunction Diodes

scholarly journals Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

2010 ◽  
Vol 107 (12) ◽  
pp. 124512 ◽  
Author(s):  
P. M. Gammon ◽  
A. Pérez-Tomás ◽  
M. R. Jennings ◽  
V. A. Shah ◽  
S. A. Boden ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface Characteristics ◽  
Heterojunction Diodes

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

2013 ◽  
Vol 102 (25) ◽  
pp. 251117 ◽  
Author(s):  
Jay Prakash Gupta ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Thomas Adam ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heterojunction Diodes

Characteristics of mesa- and LOCOS-isolated molecular beam epitaxy SiGe diodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 969-974
Author(s):  
Z. R. Tang ◽  
C. A. T. Salama ◽  
J. -P. Noel ◽  
D. C. Houghton ◽  
M. Buchanan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Potential Barriers ◽  
In Series ◽  
Heterojunction Diodes

Molecular beam epitaxy grown p+–n SiGe–Si heterojunction diodes with and without p+Si caps on top of the p+ SiGe have been fabricated on n-type Si<100> wafers with and without SiO2 LOCOS patterns. It is shown that the p+Si caps create p+–p+ Si–SiGe isotype heterojunctions in series with the p+–n SiGe–Si heterojunctions. Potential barriers and carrier depletion regions exist in the isotype heterojunction regions owing to the band-gap difference between the two materials. Effects of the LOCOS and the p+–p+ Si–SiGe isotype heterojunction in series with the p+–n SiGe–Si heterojunction on the characteristics of the diodes were studied experimentally and using simulation. The diodes fabricated exhibited I–V characteristics ideality factors between 1.05 and 1.20.

Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 34 (10) ◽  
pp. 1217-1219 ◽  
Author(s):  
Sangcheol Kim ◽  
Jay Gupta ◽  
Nupur Bhargava ◽  
Matthew Coppinger ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

Molecular beam epitaxy Si/4H-SiC heterojunction diodes

2007 ◽  
Author(s):  
P. A. Mawby ◽  
A. Perez-Tomas ◽  
M. R. Jennings ◽  
M. Davis ◽  
J. A. Covington ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heterojunction Diodes
Sign in / Sign up

Export Citation Format

Share Document