Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition

2005 ◽  
Vol 86 (25) ◽  
pp. 252110 ◽  
Author(s):  
Myungjin Park ◽  
Jaehyoung Koo ◽  
Jinwoo Kim ◽  
Hyeongtag Jeon ◽  
Choelhwyi Bae ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Substrate Oxidation ◽  
Si Substrate ◽  
Layer Deposition

Suppression of substrate oxidation during ozone based atomic layer deposition of Al2O3: Effect of ozone flow rate

2010 ◽  
Vol 97 (16) ◽  
pp. 162903 ◽  
Author(s):  
Jinhee Kwon ◽  
Min Dai ◽  
Mathew D. Halls ◽  
Yves. J. Chabal
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Atomic Layer ◽  
Substrate Oxidation ◽  
Layer Deposition

X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

2007 ◽  
Vol 22 (5) ◽  
pp. 1214-1218 ◽  
Author(s):  
Hong-Liang Lu ◽  
Min Xu ◽  
Shi-Jin Ding ◽  
Wei Chen ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Si Substrate ◽  
Interfacial Film ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Plasma Pretreatment

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al2O3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH3-plasma-nitrided surfaces. Al2O3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiOxNy inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.

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