Plasma sputtering system for deposition of thin film combinatorial libraries

2005 ◽  
Vol 76 (6) ◽  
pp. 062221 ◽  
Author(s):  
James S. Cooper ◽  
Guanghai Zhang ◽  
Paul J. McGinn
Keyword(s):  
Thin Film ◽  
Combinatorial Libraries ◽  
Plasma Sputtering ◽  
Sputtering System

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Study on Effects of Hydrogen Flow Rates on the Properties of ZnO Thin Film Deposited by Facing Targets Sputtering System

2013 ◽  
Vol 52 (11S) ◽  
pp. 11NB01 ◽  
Author(s):  
Hye Ran Kim ◽  
Long Wen ◽  
Su Bong Jin ◽  
Yoon Seok Choi ◽  
In Sik Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Flow Rates ◽  
Hydrogen Flow ◽  
Sputtering System

Design and development of an in-line sputtering system and process development of thin film multilayer neutron supermirrors

2014 ◽  
Vol 85 (12) ◽  
pp. 123103 ◽  
Author(s):  
A. Biswas ◽  
R. Sampathkumar ◽  
Ajaya Kumar ◽  
D. Bhattacharyya ◽  
N. K. Sahoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Process Development ◽  
Design And Development ◽  
Sputtering System

scholarly journals Sputtering System for Thin Film Deposition

Shinku ◽  
1971 ◽  
Vol 14 (6) ◽  
pp. 211-223
Author(s):  
Naokichi HOSOKAWA
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtering System

Combinatorial exploration of new transparent conducting oxide films by using radio frequency sputtering and their application in optoelectronic devices

2012 ◽  
Vol 1425 ◽  
Author(s):  
Tae-Won Kim ◽  
Gi-Soek Heo ◽  
Ho-Sung Kim ◽  
Jong-Ho Lee
Keyword(s):  
Thin Film ◽  
Transparent Conducting Oxide ◽  
Optoelectronic Devices ◽  
Combinatorial Libraries ◽  
Amorphous Structure ◽  
Visible Range ◽  
Smart Window ◽  
Radio Frequency Sputtering ◽  
Transparent Conducting ◽  
Ito Films

ABSTRACTThe purpose of this study is to develop new transparent conducting oxide (TCO) films by using combinatorial approach and to apply them for organic light emitting diodes (OLED) and/or thin film photovoltaic devices. For this, we have explored several TCO films with multi-components and optimized their properties by employing combinatorial sputtering system. For the first, we have fabricated combinatorial libraries composed Zn-In-Sn-O (ZITO) to reduce In content comparing with Sn-doped indium oxide (ITO). The ZITO films showed amorphous structure at the substrate temperature ranged RT∼ 350 °C, high transmittance over 85% at the visible range wavelength, and resistivity as low as 3x10-4∼10-3Ωcm. These results reveal that the ZITO films have indium composition as low as 30∼40% comparing with equivalent ITO films. Furthermore, we have fabricated OLED on glass substrates by using the amorphous ZITO anode. OLED fabricated on amorphous ZITO-coated glasses have exhibited good characteristics comparable to OLED on ITO films. Besides OLED, the amorphous ZITO TCO can be applied for other optoelectronic devices like electronic paper, thin film photovoltaic, and smart window.

Optical analysis of thin film combinatorial libraries

2004 ◽  
Vol 223 (1-3) ◽  
pp. 124-132 ◽  
Author(s):  
J.D. Perkins ◽  
C.W. Teplin ◽  
M.F.A.M van Hest ◽  
J.L. Alleman ◽  
X. Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Combinatorial Libraries ◽  
Optical Analysis

FORMATION OF TRIANGULAR Cu MICROCRYSTALS IN Ti/Cu/Si THIN FILMS DURING ANNEALING

2018 ◽  
Vol 25 (05) ◽  
pp. 1850097
Author(s):  
QIJING LIN ◽  
WEIXUAN JING ◽  
ZHUANGDE JIANG ◽  
NA ZHAO ◽  
ZIRONG WU ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Dc Magnetron Sputtering ◽  
Triangular Pyramid ◽  
Single Side ◽  
Surface Patterns ◽  
Cu Thin Film ◽  
Sputtering System

Sandwich stacked Ti/Cu/Si thin films were deposited on a single-side polished Si(111) substrate using DC magnetron sputtering system and annealed using a rapid thermal annealing (RTA) system. Complex dendritic patterns, whose branches are composed of Cu rods and triangular Cu microcrystals were obtained on Ti/Cu thin film annealed at 700[Formula: see text]C. The shape of one triangular Cu microcrystal is a truncated equilateral triangular pyramid with a flat top. Triangular Cu microcrystals grow in the number when Ti/Cu thin films are annealed at 800[Formula: see text]C. Experimental results show that anisotropy affects the growth of surface patterns and the top Ti capping layer works as a protection for the underlying Cu layer from oxidation.

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