scholarly journals Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

2005 ◽  
Vol 97 (11) ◽  
pp. 113506 ◽  
Author(s):  
Shigeyasu Uno ◽  
Nobuya Mori ◽  
Kazuo Nakazato ◽  
Nobuyoshi Koshida ◽  
Hiroshi Mizuta
Keyword(s):  
Quantum Dot ◽  
Acoustic Phonon ◽  
Deformation Potential ◽  
One Dimensional ◽  
Dimensional Array ◽  
Si Quantum Dot ◽  
Tunnel Oxides

scholarly journals Long-wave Absorption of Few-Hole Gas in Prolate Ellipsoidal Ge/Si Quantum Dot: Implementation of Analytically Solvable Moshinsky Model

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1896
Author(s):  
David B. Hayrapetyan ◽  
Eduard M. Kazaryan ◽  
Mher A. Mkrtchyan ◽  
Hayk A. Sarkisyan
Keyword(s):  
Energy Spectrum ◽  
Quantum Dot ◽  
Heavy Hole ◽  
Center Of Mass ◽  
Pair Interaction ◽  
One Dimensional ◽  
Long Wave ◽  
Si Quantum Dot ◽  
Specific Geometry ◽  
Prolate Ellipsoidal

In this paper, the behavior of a heavy hole gas in a strongly prolate ellipsoidal Ge/Si quantum dot has been investigated. Due to the specific geometry of the quantum dot, the interaction between holes is considered one-dimensional. Based on the adiabatic approximation, it is shown that in the z-direction, hole gas is localized in a one-dimensional parabolic well. By modeling the potential of pair interaction between holes in the framework of oscillatory law, the problem is reduced to a one-dimensional, analytically solvable Moshinsky model. The exact energy spectrum of the few-hole gas has been calculated. A detailed analysis of the energy spectrum is presented. The character of long-wave transitions between the center-of-mass levels of the system has been obtained when Kohn theorem is realized.

scholarly journals Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices With Different Periods

2006 ◽  
Vol 1 (1) ◽  
pp. 86-91 ◽  
Author(s):  
Zheng Yang ◽  
Jian-Lin Liu ◽  
Yi Shi ◽  
You-Dou Zheng ◽  
Kang L. Wang
Keyword(s):  
Quantum Dot ◽  
Acoustic Phonon ◽  
Phonon Modes ◽  
Si Quantum Dot

Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains

Nano Letters ◽  
2006 ◽  
Vol 6 (9) ◽  
pp. 1847-1851 ◽  
Author(s):  
Xiaoyong Wang ◽  
Zhiming M. Wang ◽  
Baolai Liang ◽  
Gregory J. Salamo ◽  
Chih-Kang Shih
Keyword(s):  
Quantum Dot ◽  
Spectroscopic Evidence ◽  
One Dimensional ◽  
Gaas Quantum Dot

Photoluminescence enhancement in double Ge/Si quantum dot structures

JETP Letters ◽  
2016 ◽  
Vol 104 (12) ◽  
pp. 823-826 ◽  
Author(s):  
A. F. Zinovieva ◽  
V. A. Zinovyev ◽  
A. I. Nikiforov ◽  
V. A. Timofeev ◽  
A. V. Mudryi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Si Quantum Dot ◽  
Photoluminescence Enhancement

MUTUAL EXCLUSION ON OPTICAL BUSES

2002 ◽  
Vol 12 (03n04) ◽  
pp. 341-358
Author(s):  
KRISHNA M. KAVI ◽  
DINESH P. MEHTA
Keyword(s):  
Mutual Exclusion ◽  
Two Dimensional ◽  
One Dimensional ◽  
Dimensional Array ◽  
Propagation Delays ◽  
Optical Buses ◽  
The One

This paper presents two algorithms for mutual exclusion on optical bus architectures including the folded one-dimensional bus, the one-dimensional array with pipelined buses (1D APPB), and the two-dimensional array with pipelined buses (2D APPB). The first algorithm guarantees mutual exclusion, while the second guarantees both mutual exclusion and fairness. Both algorithms exploit the predictability of propagation delays in optical buses.

Efficiency improvement of Si quantum dot solar cells by activation with boron implantation

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 89-93 ◽  
Author(s):  
Gyea Young Kwak ◽  
Tae Gun Kim ◽  
Songwoung Hong ◽  
Ansoon Kim ◽  
Man Hyo Ha ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Efficiency Improvement ◽  
Si Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Boron Implantation
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