Contribution of oxygen partial pressures investigated over a wide range to SrRuO3 thin-film properties in laser deposition processing

2005 ◽  
Vol 97 (10) ◽  
pp. 103525 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
B. Dabrowski ◽  
M. Maxwell ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Deposition ◽  
Film Properties ◽  
Partial Pressures ◽  
Wide Range ◽  
Srruo3 Thin Film

Plasma dynamics and its relationship with thin film properties of CdTe via pulsed laser deposition (PLD)

1998 ◽  
Vol 66 (5) ◽  
pp. 639-643 ◽  
Author(s):  
R. Diamant ◽  
L. Ponce ◽  
M. Fernández ◽  
E. Jiménez
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Film Properties ◽  
Plasma Dynamics

Correlation between plasma dynamics and thin film properties in pulsed laser deposition

1997 ◽  
Vol 109-110 ◽  
pp. 595-600 ◽  
Author(s):  
H.S Kwok ◽  
H.S Kim ◽  
D.H Kim ◽  
W.P Shen ◽  
X.W Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Film Properties ◽  
Plasma Dynamics

Pulsed Laser Deposition of Y1Ba2Cu3O7-δ?Thin Films in High Oxygen Partial Pressures

2001 ◽  
Vol 689 ◽  
Author(s):  
Timothy J. Haugan ◽  
Paul N. Barnes ◽  
Rama M. Nekkanti ◽  
Iman Maartense ◽  
Lyle B. Brunke ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Coated Conductors ◽  
Laser Deposition ◽  
Critical Temperatures ◽  
Partial Pressures ◽  
Wide Range ◽  
Lower Oxygen ◽  
Ybco Coated Conductors ◽  
Very High

ABSTRACTPulsed laser deposition of Yba2Cu3O7-δ?(YBCO) coated conductors was studied for the range of P(O2) from 120 mTorr to 1200 mTorr, higher than typically used oxygen partial pressures during deposition. The purpose of the investigation was to determine the sensitivity of YBCO film quality to varying P(O2) for scaled-up fabrication of long-length coated conductors. Deposition at high P(O2) (≥?400 mTorr) gave very high and more consistent critical temperatures (Tc ≈?92 ±?0.4 °K) than results obtained at lower oxygen partial pressures (≤?200 mTorr) as determined by magnetic susceptibility measurements. Typically, the lower partial pressures are used although the laser fluence used in this research (3.2 J/cm2) is higher than typical. Transport Jc's were consistantly high for a wide range of oxygen pressures, 5–8 ×?106 A/cm2 at 77 K, self-field for P(O2) = 200–1200 mTorr. These results indicate that pulsed laser deposition of YBCO is relatively insensitive to P(O2) at the higher pressures of oxygen considered.

Interface Formation and Thin Film Properties of an Incompatible Polymer System

1992 ◽  
Vol 280 ◽  
Author(s):  
B. Guckenbiehl ◽  
M. Stamm ◽  
T. Springer
Keyword(s):  
Thin Film ◽  
Interaction Parameter ◽  
Polymer Blend ◽  
Polymer System ◽  
Neutron Reflectivity ◽  
Interface Formation ◽  
Film Properties ◽  
Wide Range ◽  
Copolymer Poly ◽  
Better Than

ABSTRACTThe polymer blend system of deuterated polystyrene (PSd) and the statistical copolymer poly(styrene-co-para-bromo-styrene) (PBrxS) is partially compatible or incompatible depending on the degree of bromination x. The width of the interface in a bilayer system can thus be controlled in a wide range by an adjustment of x. This is demonstrated in neutron reflectivity experiments where the interfacial width is measured with an accuracy better than lnm. The interface width depends strongly on compatibility as expressed by the Flory-Huggins interaction parameter x- Results are compared with current theories.

Systematic trends of YBa2Cu3O7−δ thin films post annealed in low oxygen partial pressures

1994 ◽  
Vol 9 (8) ◽  
pp. 1936-1945 ◽  
Author(s):  
S.Y. Hou ◽  
Julia M. Phillips ◽  
D.J. Werder ◽  
T.H. Tiefel ◽  
J.H. Marshall ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Normal State Resistivity ◽  
Film Properties ◽  
Ion Channeling ◽  
Partial Pressures ◽  
High Annealing ◽  
Wide Range ◽  
Different Characteristics

Systematic studies have been performed on 1000 Å YBa2Cu3O7−δ films produced by the BaF2 process and annealed in an oxygen partial pressure (Po2) range from 740 Torr to 10 mTorr as well as a temperature range from 600 to 1050 °C. The results show that while high quality films can be annealed in a wide range of oxygen partial pressure, they have different characteristics. In general, crystalline quality and Tc are optimized at high Po2 and high annealing temperature, while strong flux pinning and low normal state resistivity are achieved at lower values of both variables. Under optimized low Po2 conditions, an ion channeling Xmin of 6% is obtained on films as thick as 5000 Å. This study will serve as a useful guide to tailoring film properties to the application at hand.

Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers

2012 ◽  
Vol 508 ◽  
pp. 189-192
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Si Substrates ◽  
Partial Pressures ◽  
Deposited Films

Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi2O5 Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (PO2). the Effects of PO2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at PO2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing PO2. at PO2 = 10 Pa, the BaTi2O5 Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi2O5 Films on Si Substrates.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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