Effect of internal residual stress on the dielectric properties and microstructure of sputter-deposited polycrystalline (Ba,Sr)TiO3 thin films

2005 ◽  
Vol 97 (10) ◽  
pp. 104107 ◽  
Author(s):  
Kentaro Morito ◽  
Toshimasa Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Dielectric Properties ◽  
Sputter Deposited

scholarly journals Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Diffraction Analysis ◽  
Piezoelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

Influence of deposition parameters on the stress of magnetron sputter-deposited AlN thin films on Si(100) substrates

2003 ◽  
Vol 18 (2) ◽  
pp. 423-432 ◽  
Author(s):  
G.F. Iriarte ◽  
F. Engelmark ◽  
M. Ottosson ◽  
I.V. Katardjiev
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Substrate Temperature ◽  
Diffraction Method ◽  
Radius Of Curvature ◽  
X Ray Diffraction ◽  
Polycrystalline Aluminum ◽  
Deposition Parameters ◽  
Curvature Measurements ◽  
Sputter Deposited

In this work, a systematic study of the influence of five deposition parameters, i.e., process pressure, substrate temperature, target power, and substrate bias, as well as gas composition on the residual stress in fully textured polycrystalline aluminum nitride thin films deposited on Si(100) wafers using the reactive sputtering method was performed. Post-growth residual stress measurements were obtained indirectly from radius of curvature measurements of the wafer prior to and after deposition. Two different techniques were used to determine the curvature: an optically levered laser beam and an x-ray diffraction method. Stresses in both cases were then evaluated using the Stoney formulation [G.G. Stoney, Proc. R. Soc. (London)A82,172 (1909)]. Both methods give similar results, with slight quantitative differences. The existence of a transition region between tensile and compressive stress previously reported in the literature is also confirmed. The transition is shown to be strongly dependent on the process parameters. Optimal films regarding stress were grown at 2 mtorr, 900 W at the target, a 20/45 Ar/N2gas mixture, and floating potential at the substrate. The substrate temperature did not influence the measured internal stress in the films.

scholarly journals Micro-fluidic applications of telephone cord delamination blisters

2004 ◽  
Vol 855 ◽  
Author(s):  
Alex A. Volinsky ◽  
Patrick Waters ◽  
Gregory Wright
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Argon Pressure ◽  
Inexpensive Method ◽  
Directional Growth ◽  
Interfacial Toughness ◽  
Micro Fluidics ◽  
Buckling Delamination ◽  
Sputter Deposited ◽  
Stored Elastic Energy

ABSTRACTArgon pressure significantly affects the residual stress in sputter deposited thin films and coatings. In case of W thin films, high residual stresses on the order of 1–2 GPa are quite common. With the rest of sputtering parameters being equal, argon pressure determines the sign and the value of residual stress.When the amount of stored elastic energy in the film due to the residual stress exceeds the interfacial toughness, fracture normally occurs. Telephone cord buckling delamination blisters are commonly observed in compressed thin films. These mechanically active features form by a loss of adhesion between the film and the substrate due to residual stress relief, and exhibit directional growth under certain conditions. This paper considers telephone cord delamination channels for micro-fluidics applications, as this could to be a valuable, reliable, and inexpensive method of forming open channels.

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