Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition

2005 ◽  
Vol 86 (14) ◽  
pp. 142104 ◽  
Author(s):  
R. Intartaglia ◽  
B. Maleyre ◽  
S. Ruffenach ◽  
O. Briot ◽  
T. Taliercio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Nonradiative Recombination ◽  
Recombination Processes ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metal-Organic Chemical Vapor Deposition

1998 ◽  
Vol 510 ◽  
Author(s):  
S. M. Ting ◽  
Srikanth B. Samavedam ◽  
Matthew T. Currie ◽  
Thomas A. Langdo ◽  
E. A. Fitzgerald
Keyword(s):  
Phase Transitions ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Complete Suppression ◽  
Nonradiative Recombination ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractDue to the prohibitively high 4.1% lattice mismatch, direct growth of GaAs on Si invariably leads to very high dislocation densities (> 108/cm2) which have precluded its use in device applications despite numerous attempts. However, the growth of low threading dislocation density (∼2 × 106/cm2) relaxed graded Ge/GexSi1−x/Si heterostructures can bridge the gap between lattice constants by replacing the high mismatch GaAs/Si interface with a low mismatch (< 0.1%) GaAs/Ge interface. Although the lattice mismatch problem is thus eliminated, the heterovalent GaAs/Ge interface remains highly susceptible to antiphase disorder. Since antiphase boundaries (APBs) nucleated at the GaAs/Ge interface act as scattering and nonradiative recombination centers, growth of device quality GaAs on Ge/GexSi1−x/Si demands effective suppression of antiphase disorder. The current work investigates the sublattice location of GaAs on 6° offcut (001) Ge/GexSi1−x/Si substrates as a function of atmospheric pressure metal-organic chemical vapor deposition (MOCVD) growth initiation parameters. Two distinct GaAs phases are observed, one dominant at temperatures > 600°C and another at temperatures <500°C. Incomplete phase transitions during pre-growth thermal cycling account for the appearance of localized bands of anti-phase disorder where the polarity of the GaAs film switches. We suspect that background arsenic levels in the MOCVD system are largely responsible for inducing the observed phase transitions. The complete suppression of antiphase disorder under optimized growth conditions is demonstrated by transmission electron microscopy (TEM)

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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