Phase stability tuning in the NbxZr1−xN thin-film system for large stacking fault density and enhanced mechanical strength

2005 ◽  
Vol 86 (13) ◽  
pp. 131922 ◽  
Author(s):  
T. Joelsson ◽  
L. Hultman ◽  
H. W. Hugosson ◽  
J. M. Molina-Aldareguia
1990 ◽  
Vol 213 ◽  
Author(s):  
L.R. Parks ◽  
D.A. Lilienfeld ◽  
P. BØRgesen ◽  
R. Raj

ABSTRACTThis study focuses on the sequential formation of aluminide phases during annealing of titanium and aluminum thin film bilayers. The formation of titanium-rich intermetallic phases at higher annealing temperatures is emphasized. Using Rutherford Backscattering Spectrometry (RBS) analysis, and x-ray diffraction, phases formed as a function of temperature have been identified. The phases Al3Ti through Ti3Al were observed over the temperature range 450–750°C, where reaction with the SiO2 substrate occurred. All phases were present as discreet layers within the samples with several layered phases coexisting at the higher temperatures.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Y. B. Xu ◽  
Y. L. Tang ◽  
Y. L. Zhu ◽  
Y. Liu ◽  
S. Li ◽  
...  

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park

2015 ◽  
Vol 589 ◽  
pp. 173-181 ◽  
Author(s):  
A. Tynkova ◽  
G.L. Katona ◽  
G. Erdélyi ◽  
L. Daróczi ◽  
А.I. Oleshkevych ◽  
...  

2018 ◽  
Vol 33 (22) ◽  
pp. 3880-3889 ◽  
Author(s):  
Mohd. Shkir ◽  
Mohd. Arif ◽  
Vanga Ganesh ◽  
Mohamed A. Manthrammel ◽  
Arun Singh ◽  
...  

Abstract


Author(s):  
Yu.N. Makogon ◽  
O.P. Pavlova ◽  
G. Beddies ◽  
A.V. Mogilatenko ◽  
O.V. Chukhrai

Sign in / Sign up

Export Citation Format

Share Document