Hydrogen sensing properties of a Pt‐oxide‐Al0.24Ga0.76As high-electron-mobility transistor

2005 ◽  
Vol 86 (11) ◽  
pp. 112103 ◽  
Author(s):  
Chin-Chuan Cheng ◽  
Yan-Ying Tsai ◽  
Kun-Wei Lin ◽  
Huey-Ing Chen ◽  
Wen-Chau Liu
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Sensing Properties ◽  
Hydrogen Sensing

Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

2007 ◽  
Vol 90 (25) ◽  
pp. 253503 ◽  
Author(s):  
Yan-Ying Tsai ◽  
Kun-Wei Lin ◽  
Huey-Ing Chen ◽  
Ching-Wen Hung ◽  
Tzu-Pin Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Comprehensive Analysis ◽  
High Electron ◽  
High Electron Mobility ◽  
Sensing Properties ◽  
Hydrogen Sensing

Hydrogen sensing properties of a metamorphic high electron mobility transistor

2009 ◽  
Vol 94 (1) ◽  
pp. 012102 ◽  
Author(s):  
Tsung-Han Tsai ◽  
Huey-Ing Chen ◽  
Chung-Fu Chang ◽  
Po-Shun Chiu ◽  
Yi-Chun Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Sensing Properties ◽  
Hydrogen Sensing

Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal

2007 ◽  
Vol 539-543 ◽  
pp. 5025-5030 ◽  
Author(s):  
Kun Wei Lin
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Hydrogen Sensor ◽  
High Electron ◽  
High Electron Mobility ◽  
Hydrogen Sensing ◽  
Metal Work Function ◽  
Catalytic Metal ◽  
Metal Work ◽  
Sensing Characteristics

In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied.

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

2012 ◽  
Vol 37 (18) ◽  
pp. 13783-13788 ◽  
Author(s):  
Shao-Tsu Hung ◽  
Chi-Jung Chang ◽  
Chien-Hsing Hsu ◽  
Byung Hwan Chu ◽  
Chien Fong Lo ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Hydrogen Sensing ◽  
Sensing Applications

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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