Electronic transitions at defect states in Cz p-type silicon

2005 ◽  
Vol 86 (16) ◽  
pp. 162109 ◽  
Author(s):  
A. Castaldini ◽  
D. Cavalcoli ◽  
A. Cavallini ◽  
S. Binetti ◽  
S. Pizzini
Keyword(s):  
Electronic Transitions ◽  
Defect States ◽  
Type Silicon ◽  
P Type

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

2005 ◽  
Vol 202 (5) ◽  
pp. 889-895 ◽  
Author(s):  
A. Castaldini ◽  
D. Cavalcoli ◽  
A. Cavallini ◽  
S. Pizzini
Keyword(s):  
Defect States ◽  
Type Silicon ◽  
P Type

New defect states in irradiated p-type silicon

1990 ◽  
Vol 144 (3) ◽  
pp. 198-200 ◽  
Author(s):  
Kh.A. Abdullin ◽  
B.N. Mukashev ◽  
M.F. Tamendarov ◽  
T.B. Tashenov
Keyword(s):  
Defect States ◽  
Type Silicon ◽  
P Type

Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy

2005 ◽  
Author(s):  
Amartya Sengupta ◽  
Hakan Altan ◽  
Aparajita Bandyopadhyay ◽  
John F Federici ◽  
H Grebel ◽  
...  
Keyword(s):  
Thz Spectroscopy ◽  
Defect States ◽  
Type Silicon ◽  
P Type

Introduction of Electrical Defects in P-Type Silicon due to Electron-Beam and RF Sputtering Metallization Processes

1983 ◽  
Vol 25 ◽  
Author(s):  
O. Paz ◽  
F. D. Auret
Keyword(s):  
Electron Beam ◽  
Deep Level ◽  
Rf Sputtering ◽  
Electron Beam Evaporation ◽  
Defect States ◽  
Type Silicon ◽  
Carrier Recombination ◽  
Electron Beam Induced Current ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDefects introduced in p-type silicon during RF sputter deposition of Ti-W and electron-beam evaporation of hafnium were investigated using I-V, deep level transient spectroscopy and electron-beam induced current techniques. DLTS measurements indicate the presence of several deposition and evaporation induced defect states. H(0.35) at EV + .35 eV and H(0.38) were the most prominent defects. Minority carrier diffusion length results taken after annealing showed that in the case of the Hf contacts the damage was annealed out while in the case of Ti-W it was not. These differences in carrier recombination are traced to the concentration of H(0.35). Sputtering or evaporation induced damage also increased the barrier height. This observed increase was modeled assuming the introduction of donor-like defects.

On the Interaction of Dislocations with Impurities in Silicon

2005 ◽  
Vol 245-246 ◽  
pp. 15-22
Author(s):  
Daniela Cavalcoli ◽  
Anna Cavallini
Keyword(s):  
Plastic Deformation ◽  
Electronic Transitions ◽  
Conduction Band Edge ◽  
Extended Defects ◽  
Defect States ◽  
Present Contribution ◽  
Oxygen Precipitation ◽  
Deep Traps ◽  
P Type

Dislocations and impurities in silicon have been widely investigated since many years, nevertheless many questions on this subject remain still unsolved. As an example, theory, models and experimental phenomena provide evidence of the existence of shallow bands in silicon induced by the dislocation strain field. Nevertheless, only deep bands, likely associated with contamination at dislocations, have been detected up to now by junction spectroscopy. The present contribution reviews several results, obtained by the authors, on dislocation impurity interactions and their effects on the electronic properties of defect states in silicon. Point and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical methods. Different materials (oxygen precipitated and deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen precipitation, plastic deformation and metallic contamination on non-radiative electronic transitions at defect centers. A deep hole trap, named T1, has been associated to dislocation-related impurity centers, while additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms. Moreover, experimental results obtained by junction spectroscopy assessed the existence of dislocation related shallow states. These were found to be located at 70 and 60 meV from the valence and conduction band edge, respectively.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type
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