Piezoelectric characterization and thermal stability of a high-performance α-quartz-type material, gallium arsenate

2005 ◽  
Vol 97 (7) ◽  
pp. 074110 ◽  
Author(s):  
Olivier Cambon ◽  
Julien Haines ◽  
Guillaume Fraysse ◽  
Jacques Détaint ◽  
Bernard Capelle ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Performance ◽  
Type Material ◽  
Thermal Stability Of

scholarly journals Theory of the Thermal Stability of Silicon Vacancies and Interstitials in 4H–SiC

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 167
Author(s):  
José Coutinho
Keyword(s):  
Thermal Stability ◽  
Fermi Level ◽  
Density Functional ◽  
Dynamic Properties ◽  
Type Material ◽  
Temperature Threshold ◽  
Effect Analysis ◽  
Mobile Species ◽  
Two Stages ◽  
Thermal Stability Of

This paper presents a theoretical study of the electronic and dynamic properties of silicon vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several pending issues, mostly related to the thermal stability of this defect, are addressed. The silicon site vacancy and the carbon-related antisite-vacancy (CAV) pair are interpreted as a unique and bistable defect. It possesses a metastable negative-U neutral state, which “disproportionates” into VSi+ or VSi−, depending on the location of the Fermi level. The vacancy introduces a (−/+) transition, calculated at Ec−1.25 eV, which determines a temperature threshold for the annealing of VSi into CAV in n-type material due to a Fermi level crossing effect. Analysis of a configuration coordinate diagram allows us to conclude that VSi anneals out in two stages—at low temperatures (T≲600 °C) via capture of a mobile species (e.g., self-interstitials) and at higher temperatures (T≳1200 °C) via dissociation into VC and CSi defects. The Si interstitial (Sii) is also a negative-U defect, with metastable q=+1 and q=+3 states. These are the only paramagnetic states of the defect, and maybe that explains why it escaped detection, even in p-type material where the migration barriers are at least 2.7 eV high.

Thermal Stability of High Performance Thermoelectric β-Zn4Sb3 in Argon

2011 ◽  
Vol 2011 (17) ◽  
pp. 2733-2737 ◽  
Author(s):  
Hao Yin ◽  
Birgitte L. Pedersen ◽  
Bo B. Iversen
Keyword(s):  
Thermal Stability ◽  
High Performance ◽  
Thermal Stability Of

Solution Blow Spun High Performance Co-Polyimide Nanofibers

2017 ◽  
Vol 898 ◽  
pp. 2181-2186
Author(s):  
Jing Li ◽  
Jun Rong Yu ◽  
Jing Zhu ◽  
Yan Wang ◽  
Zu Ming Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tensile Property ◽  
High Performance ◽  
Nanofiber Membrane ◽  
High Productivity ◽  
Thermal Imidization ◽  
Solution Blow Spinning ◽  
Ft Ir ◽  
Biphenyltetracarboxylic Dianhydride ◽  
Thermal Stability Of

Solution blow spinning (SBS) is an innovative nanofiber fabricating method with high productivity. 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) / p-phenylenediamine (PDA) / 4,4'-oxydianiline (ODA) co-polyimide nanofiber membrane was efficiently produced by SBS followed by imidization from precursor polyamic acid (PAA) nanofiber membrane in the paper. The morphologies and structures of the obtained PAA and PI nanofiber membrane were examined by SEM and FT-IR. The effect of thermal imidization temperature on the tensile property was investigated. The thermal stability of polyimide nanofiber membrane was also characterized by TGA.

Thermal stability of Mg3Sb1.475Bi0.475Te0.05 high performance n-type thermoelectric investigated through powder X-ray diffraction and pair distribution function analysis

2018 ◽  
Vol 6 (35) ◽  
pp. 17171-17176 ◽  
Author(s):  
Lasse Rabøl Jørgensen ◽  
Jiawei Zhang ◽  
Christian Bonar Zeuthen ◽  
Bo Brummerstedt Iversen
Keyword(s):  
Thermal Stability ◽  
Distribution Function ◽  
Pair Distribution Function ◽  
High Performance ◽  
Function Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of

The thermal stability of the high performance n-type Te-doped Mg3Sb1.5Bi0.5 system is investigated.

scholarly journals Curing Kinetics and Thermal Stability of Epoxy Composites Containing Newly Obtained Nano-Scale Aluminum Hypophosphite (AlPO2)

Polymers ◽  
2020 ◽  
Vol 12 (3) ◽  
pp. 644 ◽  
Author(s):  
Farimah Tikhani ◽  
Shahab Moghari ◽  
Maryam Jouyandeh ◽  
Fouad Laoutid ◽  
Henri Vahabi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
High Performance ◽  
Frequency Factor ◽  
Curing Temperature ◽  
Heating Rates ◽  
Scanning Calorimetry ◽  
Nano Scale ◽  
Aluminum Hypophosphite ◽  
Thermal Stability Of

For the first time, nano-scale aluminum hypophosphite (AlPO2) was simply obtained in a two-step milling process and applied in preparation of epoxy nanocomposites varying concentration (0.1, 0.3, and 0.5 wt.% based on resin weight). Studying the cure kinetics and thermal stability of these nanocomposites would pave the way toward the design of high-performance nanocomposites for special applications. Scanning electron microscopy (SEM) and transmittance electron microscopy (TEM) revealed AlPO2 particles having domains less than 60 nm with high potential for agglomeration. Excellent (at heating rate of 5 °C/min) and Good (at heating rates of 10, 15 and 20 °C/min) cure states were detected for nanocomposites under nonisothermal differential scanning calorimetry (DSC). While the dimensionless curing temperature interval (ΔT*) was almost equal for epoxy/AlPO2 nanocomposites, dimensionless heat release (ΔH*) changed by densification of polymeric network. Quantitative cure analysis based on isoconversional Friedman and Kissinger methods gave rise to the kinetic parameters such as activation energy and the order of reaction as well as frequency factor. Variation of glass transition temperature (Tg) was monitored to explain the molecular interaction in the system, where Tg increased from 73.2 °C for neat epoxy to just 79.5 °C for the system containing 0.1 wt.% AlPO2. Moreover, thermogravimetric analysis (TGA) showed that nanocomposites were thermally stable.

Thermal Stability of GaAs/InGaP and InGaP/(In)GaAs Interfaces

1995 ◽  
Vol 405 ◽  
Author(s):  
F. Hyuga ◽  
T. Nittono ◽  
K. Watanabe ◽  
T. Furuta
Keyword(s):  
Thermal Stability ◽  
Quantum Wells ◽  
Annealing Time ◽  
High Performance ◽  
High Reliability ◽  
Half Maximum ◽  
Single Quantum ◽  
Thermal Stabilities ◽  
Temperature Range ◽  
Thermal Stability Of

AbstractThermal stabilities of GaAs/InGaP and InGaP/(In)GaAs interfaces are investigated using InGaP/(In)GaAs/InGaP single quantum wells. Annealing is performed at a temperature range between 600 and 900 °C for 10 min. Positions and the full widths at half maximum (FWHM) of photoluminescence (PL) peaks are almost identical to those of as-grown ones up to 800 °C. Blue shifts of PL peaks and increased widths of their FWHM observed after 900 °C annealing are suppressed by shortening the annealing time to 0.1 sec. Annealing at 900 ‘C for 0.1 sec is sufficient to activate Si ions implanted into (In)GaAs layers. As a result, these thermal stabilities are able to provide high reliability and high performance of InGaP/(In)GaAs heterostructure MESFET ICs.

Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

2011 ◽  
Author(s):  
H. S. Shin ◽  
S. K. Oh ◽  
M. H. Kang ◽  
H. M. Kwon ◽  
J. Oh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Performance ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document