Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

2005 ◽  
Vol 97 (7) ◽  
pp. 073702 ◽  
Author(s):  
S. Y. Xie ◽  
S. F. Yoon ◽  
S. Z. Wang
Keyword(s):  
Thermal Annealing ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Deep Level ◽  
Electron Diffusion ◽  
Electron Diffusion Length

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

2018 ◽  
Vol 123 (23) ◽  
pp. 235104 ◽  
Author(s):  
Jonathan Lee ◽  
Chris J. Fredricksen ◽  
Elena Flitsiyan ◽  
Robert E. Peale ◽  
Leonid Chernyak ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

scholarly journals Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

2000 ◽  
Vol 77 (6) ◽  
pp. 875-877 ◽  
Author(s):  
Leonid Chernyak ◽  
Andrei Osinsky ◽  
Vladimir Fuflyigin ◽  
E. F. Schubert
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

Study of Diffusion Length and Alloy Segregation in MOCVD AlGaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
J. L. Bradshaw ◽  
W. J. Choyke ◽  
Z. C. Feng ◽  
D. L. Meier ◽  
R. L. Messham
Keyword(s):  
Low Temperature ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Direct Excitation ◽  
Gaas Substrates ◽  
Electron Diffusion Length ◽  
Alloy Segregation ◽  
Low Temperature Photoluminescence

ABSTRACTVarious thicknesses of AlGaAs are grown on GaAs substrates by MOCVD. Low temperature photoluminescence of the substrate is observed even for layers of AlGaAs 24μm thick. Direct excitation by the 488.0 nm pumping radiation and excitation by reradiation from the AlGaAs are eliminated as causes. From photoluminescence and EBIC studies, evidence is given to show that the substrate luminescence is caused by a much larger than expected electron diffusion length. A small trace of GaAs luminescence may be due to alloy segregation in the AlGaAs films themselves.

Influence of Rapid Thermal Annealing on Recombination Properties of Polycrystalline Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert
Keyword(s):  
Beneficial Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

ABSTRACTRapid thermal annealing was shown by EBIC to increase the minority-carrier diffusion length in cast polycrystalline silicon. The beneficial effect is due to a deactivation of intragrain defects (mainly dislocations) and is stable against post-RTA annealing up to at least 600 °C/ 10 min.

Rapid Diffusion of Molybdenum Trace Contamination in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. P. Tobin ◽  
A. C. Greenwald ◽  
R. G. Wolfson ◽  
D. L. Meier ◽  
P. J. Drevinsky
Keyword(s):  
Diffusion Coefficient ◽  
Transition Metals ◽  
Lower Limit ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Deep Level ◽  
Depth Profiling ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Rapid Diffusion

ABSTRACTMolybdenum contamination has been detected in silicon epitaxial layers and substrate wafers after processing in any one of several epitaxial silicon reactors. Greatly reduced minority carrier diffusion lengths and lifetimes are consistent with Mo concentrations measured by DLTS in the 1012 and 1013 cm−3 ranges. Depth profiling of diffusion length and the Mo deep level show much greater penetration than expected from previous reports of Mo as a slow diffuser. The data indicate a lower limit of 10−8 cm2/sec for the diffusion coefficient of Mo in silicon at 1200°C, consistent with high diffusivities measured for other transition metals.

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