Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition

2005 ◽  
Vol 86 (9) ◽  
pp. 091904 ◽  
Author(s):  
B. N. Mbenkum ◽  
N. Ashkenov ◽  
M. Schubert ◽  
M. Lorenz ◽  
H. Hochmuth ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent ◽  
Electro Optic

scholarly journals Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition

2016 ◽  
Vol 120 (20) ◽  
pp. 205703 ◽  
Author(s):  
Abdurashid Mavlonov ◽  
Steffen Richter ◽  
Holger von Wenckstern ◽  
Rüdiger Schmidt-Grund ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent

Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3 Film Grown by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
Sampriti Sen ◽  
E. Ching-Prado ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Ceramic Material ◽  
Normal Modes ◽  
Pulsed Laser ◽  
Rhombohedral Phase ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ft Ir

AbstractA film of Sr0.35Ba0.65TiO3 (SBT) has been grown in situ by pulsed laser deposition on (001) LaAlO3 single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1 correspond to the B1 and A1(LO) normal modes of the BaTiO3 (BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1 are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.

Temperature-dependent phonon mode and interband electronic transition evolutions of ε-InSe films derived by pulsed laser deposition

2020 ◽  
Vol 117 (10) ◽  
pp. 102101
Author(s):  
Mingzhang Xie ◽  
Ming Li ◽  
Liumeng Li ◽  
Jinzhong Zhang ◽  
Kai Jiang ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Electronic Transition ◽  
Phonon Mode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent
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