Temperature dependent electrical transport in p-ZnO/n-Si heterojunction formed by pulsed laser deposition

2009 ◽  
Vol 105 (4) ◽  
pp. 043704 ◽  
Author(s):  
S. Majumdar ◽  
P. Banerji
Keyword(s):  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent

scholarly journals Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition

2016 ◽  
Vol 120 (20) ◽  
pp. 205703 ◽  
Author(s):  
Abdurashid Mavlonov ◽  
Steffen Richter ◽  
Holger von Wenckstern ◽  
Rüdiger Schmidt-Grund ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent

Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3 Film Grown by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
Sampriti Sen ◽  
E. Ching-Prado ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Ceramic Material ◽  
Normal Modes ◽  
Pulsed Laser ◽  
Rhombohedral Phase ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ft Ir

AbstractA film of Sr0.35Ba0.65TiO3 (SBT) has been grown in situ by pulsed laser deposition on (001) LaAlO3 single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1 correspond to the B1 and A1(LO) normal modes of the BaTiO3 (BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1 are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Sign in / Sign up

Export Citation Format

Share Document