Analysis of compacted and sintered metal powders by temperature-dependent resistivity measurements

2005 ◽  
Vol 86 (4) ◽  
pp. 042114 ◽  
Author(s):  
Martin Gabl ◽  
Norbert Memmel ◽  
Erminald Bertel
Keyword(s):  
Metal Powders ◽  
Temperature Dependent ◽  
Resistivity Measurements ◽  
Sintered Metal ◽  
Temperature Dependent Resistivity

Impurity Conduction in n-Type 4H-SIC

1996 ◽  
Vol 423 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
M. D. Roth
Keyword(s):  
Activation Energies ◽  
Hopping Conduction ◽  
Admittance Spectroscopy ◽  
Temperature Dependent ◽  
Resistivity Measurements ◽  
Nitrogen Levels ◽  
Impurity Conduction ◽  
Measured Activation ◽  
Temperature Dependent Resistivity ◽  
Type Sample

AbstractImpurity conduction (or hopping conduction) has been observed in the more heavily n-type 4H-SiC samples by both temperature dependent resistivity measurements and thermal admittance spectroscopy. The measured activation energies ɛ 3 for hopping were 4–5 meV and 2.3–3.0 meV respectively. No evidence of hopping conduction was seen by either method in the sample where ND-NA < 1018 cm-3. The thermal admittance spectrum of the lightly n-type sample showed the two nitrogen levels at 53 and 100 meV.

INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850°C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS

2011 ◽  
Vol 25 (28) ◽  
pp. 3773-3783 ◽  
Author(s):  
G. UTLU
Keyword(s):  
Grain Boundary ◽  
Film Thickness ◽  
Temperature Dependent ◽  
Dominant Mechanism ◽  
Resistivity Measurements ◽  
Temperature Range ◽  
Dependent Behavior ◽  
Temperature Dependent Resistivity ◽  
Si Films ◽  
Total Resistivity

The temperature-dependent resistivity measurements of our Ag – Ni – Si silicide films with 51–343 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the variation of the resistivity of the Ag – Ni – Si silicide films with temperature exhibits an unusual temperature-dependent behavior with respect to those of the transition and untransition metals. Our measurements show that the total resistivity of the Ag – Ni – Si silicide films increases linearly with temperature up to a Tm temperature at which resistivity reaches a maximum thereafter Tm decreases rapidly and finally to zero at ~850 K. Tm temperature is found to decrease with decreasing film thickness. We have shown that in the temperature range of 100-Tm K, electron–phonon resistivity and grain boundary resistivity components responsible for the total resistivity increase. But the grain boundary scattering is dominant mechanism for the resistivity increase in our Ag – Ni – Si silicide films.

Enhanced Néel temperature in EuSnP under pressure

2019 ◽  
Vol 48 (16) ◽  
pp. 5327-5334 ◽  
Author(s):  
Xin Gui ◽  
Gregory J. Finkelstein ◽  
David E. Graf ◽  
Kaya Wei ◽  
Dongzhou Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Transition Temperature ◽  
Structural Phase ◽  
Antiferromagnetic Transition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Resistivity Measurements ◽  
Temperature Dependent Resistivity

The high-pressure single crystal X-ray diffraction results for EuSnP are reported with no structural phase transition below ∼6.2 GPa. Temperature-dependent resistivity measurements up to 2.15 GPa indicate that the antiferromagnetic transition temperature (TN) is significantly enhanced under pressure.

Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements

2006 ◽  
Vol 527-529 ◽  
pp. 827-830 ◽  
Author(s):  
Martin Rambach ◽  
Lothar Frey ◽  
Anton J. Bauer ◽  
Heiner Ryssel
Keyword(s):  
Mobility Model ◽  
Electrical Parameters ◽  
Temperature Dependent ◽  
Hall Measurements ◽  
Resistivity Measurements ◽  
Resistivity Data ◽  
Compensation Ratio ◽  
Temperature Dependent Resistivity ◽  
Post Implantation

Characterization of post implantation annealing steps is done by extracting the activation and compensation data of implanted Al atoms. Usually, this is done by Hall measurements. The preparation of Hall samples and temperature dependent Hall measurements, however, are rather complex compared to, e.g., temperature dependent resistivity measurements by 4-point probing. Therefore, a model for extracting relevant electrical parameters from resistivity data has been developed. The model is based on the neutrality equation and a temperature dependent mobility model.

Simulation of Temperature-Dependent Resistivity for Manganite La 1/3 Ca 2/3 MnO 3

2006 ◽  
Vol 23 (6) ◽  
pp. 1551-1553 ◽  
Author(s):  
Cao Shuo ◽  
Zhou Qing-Li ◽  
Guan Dong-Yi ◽  
Lu Hui-Bin ◽  
Yang Guo-Zhen
Keyword(s):  
Temperature Dependent ◽  
Temperature Dependent Resistivity

SYNTHESIS, STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF IN-SITU SYNTHESIZED POLYANILINE/SILVER NANOCOMPOSITES

2012 ◽  
Vol 05 (03) ◽  
pp. 1250026 ◽  
Author(s):  
FAHAD ALAM ◽  
SAJID ALI ANSARI ◽  
WASI KHAN ◽  
M. EHTISHAM KHAN ◽  
A. H. NAQVI
Keyword(s):  
Single Phase ◽  
In Situ Polymerization ◽  
Optical And Electrical Properties ◽  
Silver Colloid ◽  
Dielectric Measurements ◽  
Temperature Dependent ◽  
Colloidal Form ◽  
Uv Visible ◽  
Temperature Dependent Resistivity

Polyaniline (PANI) is recognized as one of the most important conducting polymers due to its high conductivity and good stability. In this paper, polyaniline/silver (PANI/Ag) nanocomposites were synthesized by in-situ polymerization of aniline using ammonium peroxydisulphate (APS) as oxidizing agent with varying concentration of Ag nanoparticles colloids (0 ml, 25 ml and 50 ml). Silver nanoparticles were synthesized separately in colloidal form from silver nitrate (Ag2NO3) with the help of reducing agent sodium borohydride (NaBH4). The PANI/ Ag nanocomposites were characterized by XRD, SEM, AFM, UV-visible, temperature dependent resistivity and dielectric measurements. All samples show a single phase nature of the nanoparticles. The electrical resistivity as function of temperature was measured in the temperature range 298–383 K, which indicates a semiconducting to metallic transition at 373 K and 368 K for 25 ml and 50 ml silver colloid samples, respectively.

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