Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy

2005 ◽  
Vol 86 (4) ◽  
pp. 042104 ◽  
Author(s):  
Mercedes Gabás ◽  
Susana Gota ◽  
José Ramón Ramos-Barrado ◽  
Miguel Sánchez ◽  
Nicholas T. Barrett ◽  
...  
Keyword(s):  
Valence Band ◽  
Conduction Mechanism ◽  
Photoemission Spectroscopy ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno

scholarly journals Response to “Comment on ‘Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft X-ray photoemission’ ” [Appl. Phys. Lett. 86, 216101 (2005)]

2005 ◽  
Vol 86 (21) ◽  
pp. 216102 ◽  
Author(s):  
Mercedes Gabás ◽  
Susana Gota ◽  
José Ramón Ramos-Barrado ◽  
Miguel Sánchez ◽  
Nicholas T. Barrett ◽  
...  
Keyword(s):  
Valence Band ◽  
Conduction Mechanism ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno

Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

2006 ◽  
Vol 88 (6) ◽  
pp. 062110 ◽  
Author(s):  
G. W. Cong ◽  
W. Q. Peng ◽  
H. Y. Wei ◽  
X. X. Han ◽  
J. J. Wu ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectrum ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  
Keyword(s):  
Valence Band ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

1996 ◽  
Vol 68 (18) ◽  
pp. 2541-2543 ◽  
Author(s):  
G. Martin ◽  
A. Botchkarev ◽  
A. Rockett ◽  
H. Morkoç
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray

scholarly journals Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Crystals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 395 ◽  
Author(s):  
Víctor Herrera ◽  
Tomás Díaz-Becerril ◽  
Eric Reyes-Cervantes ◽  
Godofredo García-Salgado ◽  
Reina Galeazzi ◽  
...  
Keyword(s):  
Raw Materials ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Sem Images ◽  
Wurtzite Phase ◽  
Fixed Amount ◽  
X Ray ◽  
Doped Zno

Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times.

The Effect of the Cu Source on Optical Properties of Cu-Doped ZnO Films

2014 ◽  
Vol 936 ◽  
pp. 618-623
Author(s):  
Lung Chien Chen ◽  
Xiu Yu Zhang ◽  
Kuan Lin Lee
Keyword(s):  
Optical Properties ◽  
Copper Acetate ◽  
Copper Nitrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray ◽  
Spray Method ◽  
Potential Applications ◽  
Doped Zno

Cu-doped ZnO (CZO) films have been widely discussed due to its potential applications in semiconductor devices, such as gas sensors or solar cells, but few articles were reported to show the effect on properties of CZO films by using different Cu sources. The article demonstrates that CZO films have been prepared by using different Cu source via a simple ultrasonic spray method, in which copper nitrate and copper acetate were used as copper sources. Optical properties of CZO films prepared by copper nitrate and copper acetate were investigated by transmittance and photoluminescence measurement. The X-ray diffraction analysis and field emission scanning electron microscopy were used to investigate the composition and the morphology of the films. The CZO films prepared by using copper acetate shows better optical properties by comprehensive analysis.

Sign in / Sign up

Export Citation Format

Share Document