In situ measurement of surface stress evolution during sputter deposition of CoCrX∕Cr (X=Pt,Ta) thin film and its magnetic properties

2005 ◽  
Vol 97 (10) ◽  
pp. 10N116
Author(s):  
J. K. Park ◽  
G. W. Ha ◽  
D. Y. Oh
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Surface Stress ◽  
Sputter Deposition ◽  
In Situ Measurement ◽  
Stress Evolution

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-situ measurement of radiation-induced conductivity of thin film ceramics

1995 ◽  
Vol 219 ◽  
pp. 169-175 ◽  
Author(s):  
J.D. Hunn ◽  
R.E. Stoller ◽  
S.J. Zinkle
Keyword(s):  
Thin Film ◽  
In Situ Measurement ◽  
Radiation Induced

In situ measurement of rate-dependent strain/stress evolution and mechanism exploration in graphene electrodes during electrochemical process

Carbon ◽  
2019 ◽  
Vol 144 ◽  
pp. 342-350 ◽  
Author(s):  
Haimei Xie ◽  
Haibin Song ◽  
Jian-gang Guo ◽  
Yilan Kang ◽  
Wei Yang ◽  
...  
Keyword(s):  
Electrochemical Process ◽  
In Situ Measurement ◽  
Stress Evolution ◽  
Rate Dependent ◽  
Dependent Strain ◽  
Strain Stress

scholarly journals Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Arthur Leis ◽  
Michael Schleenvoigt ◽  
Abdur Rehman Jalil ◽  
Vasily Cherepanov ◽  
Gregor Mussler ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
In Situ Measurement
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