Super-hard diamond indenter prepared from high-purity synthetic diamond crystal

2005 ◽  
Vol 76 (2) ◽  
pp. 026112 ◽  
Author(s):  
Hitoshi Sumiya
Keyword(s):  
High Purity ◽  
Diamond Crystal ◽  
Synthetic Diamond ◽  
Diamond Indenter

Crystalline perfection of high purity synthetic diamond crystal

1997 ◽  
Vol 178 (4) ◽  
pp. 485-494 ◽  
Author(s):  
H. Sumiya ◽  
N. Toda ◽  
Y. Nishibayashi ◽  
S. Satoh
Keyword(s):  
High Purity ◽  
Diamond Crystal ◽  
Synthetic Diamond ◽  
Crystalline Perfection

scholarly journals Magnetic properties of the natural and isotope-modified diamond and silicon carbide

2018 ◽  
Vol 185 ◽  
pp. 04007 ◽  
Author(s):  
A.N. Taldenkov ◽  
A.V. Inyushkin ◽  
E.A. Chistotina ◽  
V.G. Ralchenko ◽  
A.P. Bolshakov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Magnetic Properties ◽  
Isotopic Composition ◽  
Single Crystals ◽  
High Purity ◽  
Diamagnetic Susceptibility ◽  
Synthetic Diamond ◽  
Paramagnetic Centers ◽  
Natural Isotopic Composition ◽  
Ferromagnetic Component

The magnetic properties of single crystals of synthetic diamond and crystals of silicon carbide were studied. High-purity samples of diamonds synthesized with HPHT and CVD technologies were used. The crystals of silicon carbide were grown by sublimation and industrial technology. Along with samples with a natural isotopic composition, monoisotopic crystals of diamond (99.96% 12C and 99.96% 13C) and silicon carbide (99.993% of 28Si) were studied. On the basis of the data obtained, the diamagnetic susceptibility was determined and the concentration of paramagnetic centers and the content of the ferromagnetic component were evaluated. The results are discussed.

Development of Raman Laser Based on Synthetic Diamond Crystal

2016 ◽  
Vol 37 (5) ◽  
pp. 583-590
Author(s):  
陈志琼 CHEN Zhi-qiong ◽  
付喜宏 FU Xi-hong ◽  
张 俊 ZHANG Jun ◽  
彭航宇 PENG Hang-yu
Keyword(s):  
Diamond Crystal ◽  
Synthetic Diamond ◽  
Raman Laser

Synthetic diamond crystal strength enhancement through annealing at 50 kbar and 1500 °C

1995 ◽  
Vol 10 (7) ◽  
pp. 1700-1709 ◽  
Author(s):  
Steven W. Webb ◽  
W.E. Jackson
Keyword(s):  
Diamond Crystal ◽  
Synthetic Diamond ◽  
Diamond Lattice ◽  
Type I ◽  
Strength Enhancement ◽  
High Metal Content ◽  
Diamond Crystals ◽  
High Pressure High Temperature ◽  
High Metal ◽  
Low Levels

High-pressure, high temperature (HPHT) annealing of synthetic type I diamond crystals at 1200–1700 °C and 50–60 kbar was found to induce aggregate-nitrogen dissociation and metal coalescence as well as heal diamond lattice dislocations. For crystals with low levels of metal inclusions, HPHT annealing was observed to increase the average compressive fracture strength of the crystals by apparently strengthening the strongest crystals of the population. Crystals with high metal-content, or otherwise of low quality, are weakened by anncaling. Strengthening is believed to occur by locally stabilizing the diamond lattice by healing lattice dislocations as well as dispersing nitrogen within the lattice. A general model is presented that ties together these results with those of other researchers.

Study on the HPHT synthetic diamond crystal from Fe-C(H) system and its significance

2008 ◽  
Vol 53 (1) ◽  
pp. 137-144 ◽  
Author(s):  
ZhiJun Yang ◽  
HongZhong Li ◽  
MingSheng Peng ◽  
Jun Chen ◽  
Feng Lin ◽  
...  
Keyword(s):  
Diamond Crystal ◽  
Synthetic Diamond

Influence of substitutional nitrogen in synthetic saw-grade diamond on crystal strength

1997 ◽  
Vol 12 (6) ◽  
pp. 1646-1654 ◽  
Author(s):  
W. E. Jackson ◽  
Steven W. Webb
Keyword(s):  
Diamond Crystal ◽  
Synthetic Diamond ◽  
Crystal Surface ◽  
Local Strain ◽  
Growth Conditions ◽  
Charge Balance ◽  
Optimum Amount ◽  
Ir Microscopy ◽  
External Growth

The amount and defect type of substitutional nitrogen in synthetic diamond strongly influences crystal strength. There is an optimum amount of nitrogen that yields the highest compressive fracture strength for crystals derived from common growth conditions. It is postulated that the role of nitrogen is to charge-balance vacancies created during growth. If too little nitrogen exists in the diamond, vacancies are not charge-balanced and may serve as crack initiation and/or propagation sites. Excess nitrogen above that required to charge-balance vacancies may weaken the lattice by adding local strain to the crystal. IR microscopy indicates that most of the substitutional nitrogen in synthetic diamond is increased in the vicinity of the intersections of growth sectors on the crystal surface. Most surface IR-visible nitrogen is biased toward the (111)–(100) intersection. The bias in incorporation of substitutional nitrogen at external growth sector intersections (i.e., edges and corners) of an industrial high-grade saw diamond crystal influences the progression of fatigue by microfracture during cutting of hard stone.

A Study of Free- and Bound-Exciton Recombination in Device Quality Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
S. J. Sharp ◽  
A. T. Collins
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Dependence ◽  
High Purity ◽  
Vapour Deposition ◽  
Synthetic Diamond ◽  
Free Exciton ◽  
Chemical Vapour ◽  
High Pressure High Temperature ◽  
Exciton Recombination

ABSTRACTA cathodoluminescence (CL) study of free- and bound-exciton recombination in high purity high pressure high temperature (HPHT) synthetic diamond is presented, including temperature dependence measurements of the free-exciton intensity and luminescence decaytime. The results are compared with those from device quality diamond produced using the chemical vapour deposition (CVD) process.

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