Theoretical analysis of the microwave-drill near-field localized heating effect

2005 ◽  
Vol 97 (3) ◽  
pp. 034909 ◽  
Author(s):  
E. Jerby ◽  
O. Aktushev ◽  
V. Dikhtyar
The Analyst ◽  
2016 ◽  
Vol 141 (5) ◽  
pp. 1779-1788 ◽  
Author(s):  
Dmitry Kurouski ◽  
Nicolas Large ◽  
Naihao Chiang ◽  
Nathan Greeneltch ◽  
Keith T. Carron ◽  
...  

Simplicity and low cost has positioned inkjet 3D substrates as the most commonly used SERS platforms for the detection and the identification of analytes down to the nanogram and femtogram levels.


Author(s):  
Keivan Etessam-Yazdani ◽  
Sadegh M. Sadeghipour ◽  
Mehdi Asheghi

The performance and reliability of sub-micron semiconductor transistors demands accurate modeling of electron and phonon transport at nanoscales. The continued downscaling of the critical dimensions, introduces hotspots, inside transistors, with dimensions much smaller than phonon mean free path. This phenomenon, known as localized heating effect, results in a relatively high temperature at the hotspot that cannot be predicted using heat diffusion equation. While the contribution of the localized heating effect to the total device thermal resistance is significant during the normal operation of transistors, it has even greater implications for the thermoelectrical behavior of the device during an electrostatic discharge (ESD) event. The Boltzmann transport equation (BTE) can be used to capture the ballistic phonon transport in the vicinity of a hot spot but many of the existing solutions are limited to the one-dimensional and simple geometry configurations. We report our initial progress in solving the two dimensional Boltzmann transport equation for a hot spot in an infinite media (silicon) with constant temperature boundary condition and uniform heat generation configuration.


2004 ◽  
Vol 84 (25) ◽  
pp. 5109-5111 ◽  
Author(s):  
A. Copty ◽  
F. Sakran ◽  
M. Golosovsky ◽  
D. Davidov ◽  
A. Frenkel

2002 ◽  
Vol 57 (1) ◽  
pp. 55-64 ◽  
Author(s):  
Gregory T. Martin ◽  
Uwe F. Pliquett ◽  
James C. Weaver

Author(s):  
М.С. НУЖНОВ ◽  
Ю.В. КУЗНЕЦОВ ◽  
А.Б. БАЕВ ◽  
М.А. КОНОВАЛЮК

Рассмотрены методы анализа пространственных характеристик непреднамеренных электромагнитных излучений, измеренных в ближней зоне средств вычислительной техники. Развитием подхода к обнаружению случайных процессов является алгоритм, основанный на оценке степени циклостационарности с использованием двумерной автокорреляционной функции измеренного сигнала. В работе проведены теоретический анализ свойств степени циклостационарности и экспериментальные исследования по обнаружению источников непреднамеренных излучений электронных устройств. Methods of analysis of spatial characteristics of unintentional electromagnetic radiation measured in the near-field of the electronic devices are considered. An improved algorithm for detecting such electromagnetic radiation is proposed. It is based on the estimation of the degree of cyclostationarity using the two-dimensional autocorrelation function of the measured signal. Theoretical analysis of the properties of the degree of cyclostationarity is performed. Experimental research on the detection of sources of unintentional radiation of electronic devices is presented.


2014 ◽  
Vol 962-965 ◽  
pp. 886-889
Author(s):  
Zong Gang Wang ◽  
Zhen Wei

The paper analyzed the process of the microwave drill for rock, and established the theoretical analysis model and the system equations. And through the numerical simulation, the electric field intensity and the temperature of the top of the microwave generator increased with the increase of the depth that the conductor was inserted, and the thermal runaway effect was strengthened. So the microwave assisted rock breaking scheme with microwave near field energy and thermal runaway effect is feasible.


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