Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes

2004 ◽  
Vol 85 (26) ◽  
pp. 6374-6376 ◽  
Author(s):  
June-O Song ◽  
Tae-Yeon Seong
Keyword(s):  
Ultraviolet Light ◽  
Ohmic Contact ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Ultraviolet light-emitting diodes with polarization-doped p-type layer

2016 ◽  
Vol 97 ◽  
pp. 353-357 ◽  
Author(s):  
Wenxiao Hu ◽  
Ping Qin ◽  
Weidong Song ◽  
Chongzhen Zhang ◽  
Rupeng Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Type Layer ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

2004 ◽  
Vol 85 (14) ◽  
pp. 2797-2799 ◽  
Author(s):  
Guan-Ting Chen ◽  
Chang-Chi Pan ◽  
Chi-Shin Fang ◽  
Tzu-Chien Huang ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Reflectivity ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient

2010 ◽  
Vol 207 (6) ◽  
pp. 1393-1396 ◽  
Author(s):  
Kengo Nagata ◽  
Tomoki Ichikawa ◽  
Kenichiro Takeda ◽  
Kentaro Nagamatsu ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Output Power ◽  
Light Emitting Diodes ◽  
High Output Power ◽  
Light Emitting ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes ◽  
High Output ◽  
Mg Doped
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