Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method

Nguyen Xuan Sang; Tay Chuan Beng; Tang Jie; Eugene A. Fitzgerald; Chua Soo Jin

doi:10.1002/pssa.201228643

Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method

physica status solidi (a) ◽

10.1002/pssa.201228643 ◽

2013 ◽

Vol 210 (8) ◽

pp. 1618-1623 ◽

Cited By ~ 7

Author(s):

Nguyen Xuan Sang ◽

Tay Chuan Beng ◽

Tang Jie ◽

Eugene A. Fitzgerald ◽

Chua Soo Jin

Keyword(s):

Aqueous Solution ◽

Ultraviolet Light ◽

Solution Method ◽

Light Emitting Diodes ◽

Zno Nanorods ◽

Light Emitting ◽

P Type ◽

Ultraviolet Light Emitting Diodes ◽

Gan Film ◽

Aqueous Solution Method

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Ultraviolet light-emitting diodes with polarization-doped p-type layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.06.016 ◽

2016 ◽

Vol 97 ◽

pp. 353-357 ◽

Cited By ~ 3

Author(s):

Wenxiao Hu ◽

Ping Qin ◽

Weidong Song ◽

Chongzhen Zhang ◽

Rupeng Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Type Layer ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Nanoscale Research Letters ◽

10.1186/s11671-018-2539-9 ◽

2018 ◽

Vol 13 (1) ◽

Cited By ~ 19

Author(s):

Zi-Hui Zhang ◽

Sung-Wen Huang Chen ◽

Chunshuang Chu ◽

Kangkai Tian ◽

Mengqian Fang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Mg Doping ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2878727 ◽

2019 ◽

Vol 66 (1) ◽

pp. 478-484 ◽

Cited By ~ 15

Author(s):

Hongchang Tao ◽

Shengrui Xu ◽

Jincheng Zhang ◽

Peixian Li ◽

Zhiyu Lin ◽

...

Keyword(s):

Numerical Investigation ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer

Optics Communications ◽

10.1016/j.optcom.2018.10.024 ◽

2019 ◽

Vol 433 ◽

pp. 236-241 ◽

Cited By ~ 10

Author(s):

Yufei Hou ◽

Zhiyou Guo

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Hole Injection ◽

Light Emitting ◽

Type Layer ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Applied Physics Letters ◽

10.1063/1.1805199 ◽

2004 ◽

Vol 85 (14) ◽

pp. 2797-2799 ◽

Cited By ~ 13

Author(s):

Guan-Ting Chen ◽

Chang-Chi Pan ◽

Chi-Shin Fang ◽

Tzu-Chien Huang ◽

Jen-Inn Chyi ◽

...

Keyword(s):

Ultraviolet Light ◽

Ohmic Contacts ◽

Light Emitting Diodes ◽

Light Emitting ◽

High Reflectivity ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

IEEE Photonics Journal ◽

10.1109/jphot.2014.2387253 ◽

2015 ◽

Vol 7 (1) ◽

pp. 1-10 ◽

Cited By ~ 26

Author(s):

Xianglong Bao ◽

Pai Sun ◽

Songqing Liu ◽

Chunya Ye ◽

Shuping Li ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Performance Improvements ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient

physica status solidi (a) ◽

10.1002/pssa.200983448 ◽

2010 ◽

Vol 207 (6) ◽

pp. 1393-1396 ◽

Cited By ~ 1

Author(s):

Kengo Nagata ◽

Tomoki Ichikawa ◽

Kenichiro Takeda ◽

Kentaro Nagamatsu ◽

Motoaki Iwaya ◽

...

Keyword(s):

Ultraviolet Light ◽

Output Power ◽

Light Emitting Diodes ◽

High Output Power ◽

Light Emitting ◽

P Type ◽

Ultraviolet Light Emitting Diodes ◽

High Output ◽

Mg Doped

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Increasing the carrier injection efficiency of GaN-based ultraviolet light-emitting diodes by double Al composition gradient last quantum barrier and p-type hole supply layer

IEEE Photonics Journal ◽

10.1109/jphot.2021.3058651 ◽

2021 ◽

pp. 1-1

Author(s):

Jinxing Wu ◽

Peixian Li ◽

Xiaowei Zhou ◽

Jiangtao Wu ◽

Yue Hao

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Composition Gradient ◽

Carrier Injection ◽

Injection Efficiency ◽

Light Emitting ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes

Applied Physics Letters ◽

10.1063/1.1834990 ◽

2004 ◽

Vol 85 (26) ◽

pp. 6374-6376 ◽

Cited By ~ 52

Author(s):

June-O Song ◽

Tae-Yeon Seong

Keyword(s):

Ultraviolet Light ◽

Ohmic Contact ◽

Light Emitting Diodes ◽

Light Emitting ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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ZnO Coaxial Nanorod Homojunction UV Light-Emitting Diodes Prepared by Aqueous Solution Method

Small ◽

10.1002/smll.201102369 ◽

2012 ◽

Vol 8 (8) ◽

pp. 1204-1208 ◽

Cited By ~ 35

Author(s):

Xuan Sang Nguyen ◽

Chuan Beng Tay ◽

Eugene A. Fitzgerald ◽

Soo Jin Chua

Keyword(s):

Aqueous Solution ◽

Solution Method ◽

Light Emitting Diodes ◽

Uv Light ◽

Light Emitting ◽

Aqueous Solution Method

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