Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration

2004 ◽  
Vol 85 (22) ◽  
pp. 5382-5384 ◽  
Author(s):  
T. Kimura ◽  
J. Hamrle ◽  
Y. Otani ◽  
K. Tsukagoshi ◽  
Y. Aoyagi
Keyword(s):  
Spin Valve ◽  
Spin Accumulation ◽  
Local Spin ◽  
Nonlocal Spin Valve

scholarly journals Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices

2019 ◽  
Vol 100 (2) ◽  
Author(s):  
Y. Fujita ◽  
M. Yamada ◽  
M. Tsukahara ◽  
T. Naito ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Valve ◽  
Spin Accumulation ◽  
Local Spin

Effect of probe configuration on spin accumulation in lateral spin-valve structure

2005 ◽  
Vol 286 ◽  
pp. 88-90 ◽  
Author(s):  
T. Kimura ◽  
J. Hamrle ◽  
Y. Otani ◽  
K. Tsukagoshi ◽  
Y. Aoyagi
Keyword(s):  
Spin Valve ◽  
Spin Accumulation ◽  
Valve Structure

Effect of intervening ferromagnet on spin accumulation in Py/Au/Py spin valve device

2006 ◽  
Author(s):  
Janghae Ku ◽  
Joonyeon Chang ◽  
Jonghwa Eom ◽  
Suk- Hee Han ◽  
Gyutae Kim
Keyword(s):  
Spin Valve ◽  
Spin Accumulation

scholarly journals Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices

Nano Letters ◽  
2016 ◽  
Vol 16 (6) ◽  
pp. 3533-3539 ◽  
Author(s):  
Marc Drögeler ◽  
Christopher Franzen ◽  
Frank Volmer ◽  
Tobias Pohlmann ◽  
Luca Banszerus ◽  
...  
Keyword(s):  
Spin Valve ◽  
Nonlocal Spin Valve

Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

2021 ◽  
Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Transverse Spin ◽  
Spin Accumulation ◽  
Spin Channel ◽  
Relative Angle ◽  
Channel Layer ◽  
Spin Polarized ◽  
Resistance Model ◽  
Large Spin

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

Effects of FM/NM Interfaces on Spin Accumulation in Free Layer of Pseudo-Spin-Valve Structure

2007 ◽  
Vol 998 ◽  
Author(s):  
Jiuning Hu ◽  
Min Ren ◽  
Lei Zhang ◽  
Ning Deng ◽  
Hao Dong ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Accumulation ◽  
Free Layer ◽  
Fixed Layer ◽  
Spacer Layer ◽  
Polarization Factor ◽  
Valve Structure ◽  
Parallel Configuration

ABSTRACTThe ferromagnetic/nonmagnetic (FM/NM) interfacial effects on the spin accumulation in the free layer were studied in a pseudo-spin-valve structure (PSVs) consisting of two FM layers separated by a NM spacer layer. We developed a spin current model for the current-induced magnetic switching (CIMS) effect based on the spin diffusion equations and appropriate boundary conditions, and derived a new formula for the spin-dependent electrochemical potentials that are related to the spin-dependent density of states. The results indicate that the spin accumulation in the free layer mainly depends on the interfacial spin asymmetry coefficient Ξ?which originates from the spin-dependent interfacial conductance. In the parallel (anti-parallel) configuration of the magnetization direction for the free and fixed layer, the positive (negative) electron current (electrons from the free layer to the fixed layer and vice versa) drives the spin current polarization factor at the interface between the top electrode and the free layer to vary from Ξ? (-Ξ?) to 0, while at the interface between the free layer and the spacer layer the spin current polarization factor vary from Ξ? (0) to Ξ?/2, which means the total spin current polarization factor in the free layer varies from 0 (Ξ?) to Ξ?/2. These results show that the anti-parallel configuration has a less critical switching current than that of the parallel configuration. Thus, we can design PSVs with symmetrical critical current based on the model.

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