scholarly journals Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

2004 ◽  
Vol 96 (12) ◽  
pp. 7596-7602 ◽  
Author(s):  
P. J. McNally ◽  
J. Kanatharana ◽  
B. H. W. Toh ◽  
D. W. McNeill ◽  
A. N. Danilewsky ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Copper Metallization ◽  
Electroless Copper ◽  
The Impact ◽  
Interconnect Technology

Novel Wet Chemical Copper Metallization for Glass Interposers

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001535-001554
Author(s):  
Simon Bamberg ◽  
Ralf Bruening ◽  
Johannes Etzkorn ◽  
Frank Bruening
Keyword(s):  
Manufacturing Industry ◽  
Copper Layer ◽  
Inorganic Materials ◽  
Copper Metallization ◽  
Organic Substrates ◽  
Copper Plating ◽  
Electrolytic Copper ◽  
Electroless Copper ◽  
Wet Chemical ◽  
The Impact

The focus of the chip and IC substrate manufacturing industry for interposers is currently shifting from organic substrates to inorganic materials. Interposers overcome the dimensional mismatch between a die and an organic PWB substrate and need to buffer the differences in thermal expansion between these two materials. While inorganics like silicon and glass, have a low CTE value compared to organic material, glass has some significant advantages over silicon. These are namely material cost, availability in panel size and a better electrical insulation. In order to further increase the cost advantage, metallization could be done by either electroless or electrolytic copper plating as an alternative route to sputter technology. Both wet chemical processes are well established in PWB manufacturing and need adaptation to glass substrates. Compared to sputtering, 3D-features can be covered with a wet chemical treatment in a comparatively economical process. Filling of TGVs (Through Glass Vias) by electrolytic copper plating requires the presence of a conductive film which is created by applying electroless copper deposition of typically 300–500nm thickness. The general issue is poor adhesion to the smooth glass surfaces. To improve adhesion between glass and metal, various treatments were assessed in this study: Mechanical anchoring was achieved by etching the substrate (subtractive) as well as by depositing nano-sized silica particles (additive). Both treatments are in solution and 3D-features are accessible in contrast to a purely mechanical approach. Surface treatments without inducing additional roughness included the adsorption of functional metal-affine polyelectrolytes and silanization for conditioning which enhanced the adhesion of the copper layer to various degrees. To study the impact of chemical formulation on strain/stress development and relaxation in the film as a key impact factor for blister (adhesion) performance, the electroless copper layer growth was monitored by in-situ XRD methods during and after deposition.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

scholarly journals Combined Effects of Calcium Addition and Thermal Processing on the Texture and In Vitro Digestibility of Starch and Protein of Black Beans (Phaseolus vulgaris)

Foods ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1368
Author(s):  
Marbie Alpos ◽  
Sze Ying Leong ◽  
Indrawati Oey
Keyword(s):  
Thermal Processing ◽  
Profile Analysis ◽  
Protein Digestibility ◽  
In Vitro Digestibility ◽  
Texture Profile ◽  
Black Beans ◽  
Calcium Addition ◽  
The Impact ◽  
Cacl2 Solution

Legumes are typically soaked overnight to reduce antinutrients and then cooked prior to consumption. However, thermal processing can cause over-softening of legumes. This study aimed to determine the effect of calcium addition (0, 100, 300, and 500 ppm in the form of calcium chloride, CaCl2), starting from the overnight soaking step, in reducing the loss of firmness of black beans during thermal processing for up to 2 h. The impact of calcium addition on the in vitro starch and protein digestibility of cooked beans was also assessed. Two strategies of calcium addition were employed in this study: (Strategy 1/S1) beans were soaked and then cooked in the same CaCl2 solution, or (Strategy 2/S2) cooked in a freshly prepared CaCl2 solution after the calcium-containing soaking medium was discarded. Despite the texture degradation of black beans brought about by increasing the cooking time, texture profile analysis (TPA) revealed that their hardness, cohesiveness, springiness, chewiness, and resilience improved significantly (p < 0.05) with increasing calcium concentration. Interestingly, beans cooked for 2 h with 300 ppm CaCl2 shared similar hardness with beans cooked for 1 h without calcium addition. Starch and protein digestibility of calcium-treated beans generally improved with prolonged cooking. However, calcium-treated beans cooked for 1 h under S2 achieved a reduced texture loss and a lower starch digestibility than those beans treated in S1. A lower starch digestion could be desired as this reflects a slow rise in blood glucose levels. Findings from this result also showed that treating black beans with high level of CaCl2 (i.e., 500 ppm) was not necessary, otherwise this would limit protein digestibility of cooked black beans.

Evolution of Stress During Formation of Titanium Disilicide by Rta and Tube Furnace Annealing

1990 ◽  
Vol 202 ◽  
Author(s):  
J.F. Jongste ◽  
O.B. Loopstra ◽  
G.C.A.M. Janssen ◽  
S. Radelaar
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Reaction Rates ◽  
Titanium Disilicide ◽  
Furnace Annealing ◽  
Integrated Circuit Fabrication ◽  
Annealing Step ◽  
Circuit Fabrication ◽  
The Difference ◽  
Processing Steps

Integrated circuit fabrication consists of many processing steps: e.g. lithography, etching, implantation and metallization. Some of these processes are combined with thermal processing. Heat treatments require special attention because previous fabrication steps may be influenced: e.g. dopant profiles may be deteriorated. The amount of interference of an annealing step with a former process is determined by the ratio of the reaction rates (and hence by the difference in activation energies).

Proteomics analysis to investigate the impact of diversified thermal processing on meat tenderness in Hengshan goat meat

Meat Science ◽  
2021 ◽  
pp. 108655
Author(s):  
Wei Jia ◽  
Rong Zhang ◽  
Li Liu ◽  
Zhenbao Zhu ◽  
Haizhen Mo ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Meat Tenderness ◽  
Proteomics Analysis ◽  
Goat Meat ◽  
The Impact

Silicon Rapid Thermal Processing with Ripple Pyrometry

1997 ◽  
Vol 502 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Wide Field ◽  
Loop Control ◽  
Dopant Activation ◽  
Integrated Circuit Fabrication ◽  
Metal Silicides ◽  
Circuit Fabrication ◽  
Infrared Lamps

ABSTRACTThermal processing in silicon integrated circuit fabrication steps for dopant activation, metal silicides, annealing, and oxidation commonly uses single-wafer furnaces that rapidly heat wafers with incandescent infrared lamps. Radiation pyrometers and thermocouple probes are the principle methods of measuring wafer temperature for closed-loop control of rapid thermal processes. The challenge with thermocouples is in dealing with heat from the lamps and non-ideal thermally resistive wafer contact. The challenge with pyrometry is in compensating for the variable emissivity of wafer surfaces and suppressing interference from the lamps. Typical deposited or grown layers of silicon nitride, silicon dioxide, and polycrystalline silicon can produce dramatic changes in emissivity. Layer thicknesses and composition are generally not known with sufficient accuracy, so a method for real time in situ emissivity compensation is required. Accufiber introduced a “ripple technique” to address this issue. The idea is to use two probes, separately sensing radiation from the wafer and the lamps, and extracting AC and quasi-DC parts from each. The AC signals provide a measure of the reflectivity of the wafer, and thence emissivity, as well as the fraction of reflected lamp radiation present in the DC signals. Lucent Technologies introduced a method of using AC lamp ripple to measure wafer temperatures with two radiation probes at a wall in the furnace. One probe views radiation emanating from the wafer through a gap in the lamp array. The other probe has a wide field of view to include lamp radiation. The accuracy of Lucent devices, determined from process results on wafers with various emissivities, is typically in the range of 12°C to 18°C at three standard deviations.

Reliability aspects of copper metallization and interconnect technology for power devices

2016 ◽  
Vol 64 ◽  
pp. 393-402 ◽  
Author(s):  
Frank Hille ◽  
Roman Roth ◽  
Carsten Schäffer ◽  
Holger Schulze ◽  
Nicolas Heuck ◽  
...  
Keyword(s):  
Copper Metallization ◽  
Power Devices ◽  
Interconnect Technology

Design and Device Mismatch Analysis of CSS–UWB Pulse Generator

2021 ◽  
Author(s):  
Saif Benali ◽  
Imen Barraj ◽  
Hatem Trabelsi
Keyword(s):  
Integrated Circuit ◽  
Spread Spectrum ◽  
Pulse Generator ◽  
Random Parameter ◽  
Pulse Frequency ◽  
Ring Oscillator ◽  
Ultra Wideband ◽  
Ramp Generator ◽  
Device Mismatch ◽  
The Impact

This paper presents the design of a Chirp Spread Spectrum (CSS), ultra-wideband (UWB), pulse generator (PG) and device mismatch impact on its performance. The proposed CSS-PG is built using a differential ring oscillator (RO) controlled by a ramp generator, allowing varying linearly the pulse frequency with time over the CSS pulse duration. Device mismatches and random variations during integrated circuit manufacturing are the most critical imperfections in high precision differential UWB voltage controlled RO circuit. These mismatches lead to behavioral variations of the PG. The proposed CSS-UWB-PG is designed and analyzed using CMOS 0.18[Formula: see text][Formula: see text]m technology. The CSS-PG presents an output swing of 266[Formula: see text]mV Vpp for 20[Formula: see text]nsec and consumes 1.72[Formula: see text]mW for a PRF of 10[Formula: see text]MHz. The simulated PSD covers the UWB low band from 3[Formula: see text]GHz to 5[Formula: see text]GHz and complies with the FCC regulations. For [Formula: see text] mismatch, the simulation results show a maximum relative accuracy on oscillation frequency and phase noise of 3.43% and 6.9%, respectively. Monte Carlo and process simulation are performed to study the impact of the random parameter variation on this CSS-PG. Theses simulations show the robustness of the proposed design as the PG PSD is still inside the FCC-UWB mask and its bandwidth is greater than 500[Formula: see text]MHz.

Modelling of phase transformations and hardening of carbonitrided steels

2004 ◽  
Vol 120 ◽  
pp. 129-136
Author(s):  
M. Przyłęcka ◽  
W. Gęstwa ◽  
G. E. Totten
Keyword(s):  
Wear Resistance ◽  
Phase Composition ◽  
Abrasive Wear ◽  
Phase Transformations ◽  
Thermal Processing ◽  
Retained Austenite ◽  
Abrasive Wear Resistance ◽  
Processing Conditions ◽  
The Impact

There are a variety of opinions regarding the influence of retained austenite and carbides on the properties exhibited by carbonitrided steels. In this paper, the development of a model marking relationship between phase composition, and properties of hardened carbonitrided steel has been presented. A summary of the impact of structure on properties is provided in Table 1. In the study reported here, the impact of thermal processing conditions on retained austenite and carbides was examined for carbonitrided and hardened 20 (C22), 20H (20Cr4), 15HN (17CrNi6-6) and 16HG (16MnCr5) steels. The models that are reported were experimentally validated. In particular, the results obtained for structure with respect to hardness and abrasive wear resistance were discussed for carbonitrided and hardened 20H (20Cr4) steel.

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