Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopy

2004 ◽  
Vol 96 (11) ◽  
pp. 6348-6352 ◽  
Author(s):  
G. Adamopoulos ◽  
J. Robertson ◽  
N. A. Morrison ◽  
C. Godet
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Carbon ◽  
Hydrogen Content ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

LOW HYDROGEN CONTENT HYDROGENATED AMORPHOUS CARBON FILMS USING DIRECT CURRENT GLOW DISCHARGE PLASMA CVD

2002 ◽  
Vol 16 (06n07) ◽  
pp. 860-865 ◽  
Author(s):  
MANJU MALHOTRA ◽  
SATYENDRA KUMAR
Keyword(s):  
Glow Discharge ◽  
Amorphous Carbon ◽  
Hydrogen Content ◽  
Discharge Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Glow Discharge Plasma ◽  
Chemical Vapor Deposition Method ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

We report on the growth of hydrogenated amorphous carbon (a-C:H) films, using a simple dc glow discharge plasma chemical vapor deposition method. A variety of complementary techniques were employed to analyze the properties of these films. a-C:H films having high fraction of tetrahedrally ( sp 3) bonded carbon atoms (~ 70%) and low hydrogen content (< 5at.%) were obtained. These films were characterized by a high optical bandgap ~ 2.7 eV, and refractive index (at 600nm) ~ 2.2. Growth of metastable diamond structure in a-C:H is attributed to energetic condensation of carbon containing ions in ( sp 3) configuration.

Raman spectroscopy on hydrogenated amorphous carbon

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1084
Author(s):  
Cheng Guangxu ◽  
Guo Shuling ◽  
He Yuliang ◽  
Wang Zhichao
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Carbon ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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