Publisher’s Note: “Spin injection across (110) interfaces: Fe∕GaAs(110) spin-light-emitting diodes” [Appl. Phys. Lett. 85, 1544 (2004)]

2004 ◽  
Vol 85 (17) ◽  
pp. 3939-3939 ◽  
Author(s):  
C. H. Li ◽  
G. Kioseoglou ◽  
O. M. J. van ’t Erve ◽  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting

Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes

2020 ◽  
Vol 13 (4) ◽  
pp. 043006 ◽  
Author(s):  
Anke Song ◽  
Jiajun Chen ◽  
Jinshen Lan ◽  
Deyi Fu ◽  
Jiangpeng Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting

Regulating the circular polarization in nitride-based light-emitting diodes through the spin injection

2019 ◽  
Vol 12 (12) ◽  
pp. 123005 ◽  
Author(s):  
Yaping Wu ◽  
Jiajun Chen ◽  
Jiangpeng Zhou ◽  
Jinshen Lan ◽  
Hao Zeng ◽  
...  
Keyword(s):  
Circular Polarization ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting

scholarly journals Detection of electrical spin injection by light-emitting diodes in top- and side-emission configurations

2003 ◽  
Vol 82 (13) ◽  
pp. 2160-2162 ◽  
Author(s):  
R. Fiederling ◽  
P. Grabs ◽  
W. Ossau ◽  
G. Schmidt ◽  
L. W. Molenkamp
Keyword(s):  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting ◽  
Electrical Spin ◽  
Side Emission

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

Spin injection across (110) interfaces: Fe∕GaAs(110) spin-light-emitting diodes

2004 ◽  
Vol 85 (9) ◽  
pp. 1544-1546 ◽  
Author(s):  
C. H. Li ◽  
G. Kioseoglou ◽  
O. M. J. van ’t Erve ◽  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting

Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes

2001 ◽  
Vol 79 (19) ◽  
pp. 3098-3100 ◽  
Author(s):  
B. T. Jonker ◽  
A. T. Hanbicki ◽  
Y. D. Park ◽  
G. Itskos ◽  
M. Furis ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Spin Injection ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized ◽  
Electrical Spin

Room-temperature spin injection and optical polarization in nitride-based blue and ultra-violet spin light-emitting diodes

2020 ◽  
Vol 13 (12) ◽  
pp. 123001
Author(s):  
Yaping Wu ◽  
Xuefeng Wu ◽  
Zhibai Zhong ◽  
Jiangpeng Zhou ◽  
Jiajun Chen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
Ultra Violet ◽  
Optical Polarization ◽  
Light Emitting

scholarly journals Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors

2012 ◽  
Vol 86 (20) ◽  
Author(s):  
J. Zarpellon ◽  
H. Jaffrès ◽  
J. Frougier ◽  
C. Deranlot ◽  
J. M. George ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting
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