Unified explanation for suppressed electron ionization coefficient and its weak temperature dependence in InGaP

2004 ◽  
Vol 85 (15) ◽  
pp. 3119-3121 ◽  
Author(s):  
Wah-Peng Neo ◽  
Hong Wang
Keyword(s):  
Temperature Dependence ◽  
Electron Ionization ◽  
Ionization Coefficient ◽  
Weak Temperature Dependence

Nonlocality of the electron ionization coefficient in n-MOSFETs: an analytic approach

1988 ◽  
Vol 9 (8) ◽  
pp. 399-401 ◽  
Author(s):  
J.M. Higman ◽  
I.C. Kizilyalli ◽  
K. Hess
Keyword(s):  
Electron Ionization ◽  
Analytic Approach ◽  
Ionization Coefficient

Quantum-dimensional lasers with weak temperature dependence of the output power

2000 ◽  
Vol 26 (3) ◽  
pp. 193-195 ◽  
Author(s):  
S. V. Nalivko ◽  
A. A. Afonenko ◽  
I. S. Manak
Keyword(s):  
Temperature Dependence ◽  
Output Power ◽  
Weak Temperature Dependence

scholarly journals From strong to weak temperature dependence of the two-photon entanglement resulting from the biexciton cascade inside a cavity

2019 ◽  
Vol 99 (24) ◽  
Author(s):  
T. Seidelmann ◽  
F. Ungar ◽  
M. Cygorek ◽  
A. Vagov ◽  
A. M. Barth ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Two Photon ◽  
Weak Temperature Dependence

scholarly journals Thin Al 1− x Ga x As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

2017 ◽  
Vol 4 (5) ◽  
pp. 170071 ◽  
Author(s):  
Xinxin Zhou ◽  
Chee Hing Tan ◽  
Shiyong Zhang ◽  
Manuel Moreno ◽  
Shiyu Xie ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Breakdown Voltage ◽  
Experimental Studies ◽  
Temperature Stability ◽  
Operating Conditions ◽  
Avalanche Breakdown ◽  
Avalanche Gain ◽  
Weak Temperature Dependence ◽  
Inp Substrates ◽  
Tunnelling Current

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al 1– x Ga x As 0.56 Sb 0.44 p–i–n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al 1− x Ga x As 0.56 Sb 0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86–1.08 mV K −1 , among the lowest values reported for a number of semiconductor materials. Considering no significant tunnelling current was observed at room temperature at typical operating conditions, the alloys Al 1− x Ga x As 0.56 Sb 0.44 (Ga from 0 to 0.15) are suitable for InP substrates-based APDs that require excellent temperature stability without high tunnelling current.

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