scholarly journals Polarized Raman scattering of highly [111]-oriented Pb(Zr,Ti)O3 thin films in the rhombohedral-phase field

2004 ◽  
Vol 96 (9) ◽  
pp. 5110-5116 ◽  
Author(s):  
Hyunjung Yi ◽  
Min G. Kim ◽  
Jung H. Park ◽  
Hyun M. Jang
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Phase Field ◽  
Rhombohedral Phase ◽  
Polarized Raman

scholarly journals Polarized Raman scattering of epitaxial Pb(Zr,Ti)O3 thin films in the tetragonal-phase field

2002 ◽  
Vol 81 (13) ◽  
pp. 2439-2441 ◽  
Author(s):  
Sun-Hwa Lee ◽  
Hyun M. Jang ◽  
Hyun H. Sung ◽  
Hyunjung Yi
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Phase Field ◽  
Tetragonal Phase ◽  
Polarized Raman

scholarly journals Polarized Raman scattering and SEM combined full characterization of self-assembled nematic thin films

Nanoscale ◽  
2016 ◽  
Vol 8 (14) ◽  
pp. 7672-7682 ◽  
Author(s):  
R. Srikantharajah ◽  
K. Gerstner ◽  
S. Romeis ◽  
W. Peukert
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Full Characterization ◽  
Self Assembled ◽  
Polarized Raman

scholarly journals Polarized Raman scattering study of PSN single crystals and epitaxial thin films

2015 ◽  
Vol 05 (02) ◽  
pp. 1550013 ◽  
Author(s):  
J. Pokorný ◽  
I. Rafalovskyi ◽  
I. Gregora ◽  
F. Borodavka ◽  
M. Savinov ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Single Crystals ◽  
Scattered Light ◽  
Epitaxial Thin Films ◽  
Ferroelectric State ◽  
Relaxor State ◽  
Structural Differences ◽  
Scattering Study ◽  
Polarized Raman

This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc 0.5 Nb 0.5 O 3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

scholarly journals Probing IrTe2 crystal symmetry by polarized Raman scattering

2014 ◽  
Vol 89 (22) ◽  
Author(s):  
N. Lazarević ◽  
E. S. Bozin ◽  
M. Šćepanović ◽  
M. Opačić ◽  
Hechang Lei ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Crystal Symmetry ◽  
Polarized Raman

Raman scattering crystalline assessment of polycrystalline Cu2ZnSnS4 thin films for sustainable photovoltaic technologies: Phonon confinement model

2014 ◽  
Vol 70 ◽  
pp. 272-280 ◽  
Author(s):  
M. Dimitrievska ◽  
A. Fairbrother ◽  
A. Pérez-Rodríguez ◽  
E. Saucedo ◽  
V. Izquierdo-Roca
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Phonon Confinement ◽  
Photovoltaic Technologies ◽  
Confinement Model
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