scholarly journals Polarized Raman scattering of epitaxial Pb(Zr,Ti)O3 thin films in the tetragonal-phase field

2002 ◽  
Vol 81 (13) ◽  
pp. 2439-2441 ◽  
Author(s):  
Sun-Hwa Lee ◽  
Hyun M. Jang ◽  
Hyun H. Sung ◽  
Hyunjung Yi
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Phase Field ◽  
Tetragonal Phase ◽  
Polarized Raman

scholarly journals Polarized Raman scattering of highly [111]-oriented Pb(Zr,Ti)O3 thin films in the rhombohedral-phase field

2004 ◽  
Vol 96 (9) ◽  
pp. 5110-5116 ◽  
Author(s):  
Hyunjung Yi ◽  
Min G. Kim ◽  
Jung H. Park ◽  
Hyun M. Jang
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Phase Field ◽  
Rhombohedral Phase ◽  
Polarized Raman

Raman scattering studies on PZT thin films for trigonal–tetragonal phase transition

2009 ◽  
Vol 30 (8) ◽  
pp. 083001 ◽  
Author(s):  
Liang Ting ◽  
Li Junhong ◽  
Du Wenlong ◽  
Xue Chenyang ◽  
Zhang Wendong
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Raman Scattering ◽  
Tetragonal Phase ◽  
Pzt Thin Films ◽  
Tetragonal Phase Transition

scholarly journals Polarized Raman scattering and SEM combined full characterization of self-assembled nematic thin films

Nanoscale ◽  
2016 ◽  
Vol 8 (14) ◽  
pp. 7672-7682 ◽  
Author(s):  
R. Srikantharajah ◽  
K. Gerstner ◽  
S. Romeis ◽  
W. Peukert
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Full Characterization ◽  
Self Assembled ◽  
Polarized Raman

scholarly journals Polarized Raman scattering study of PSN single crystals and epitaxial thin films

2015 ◽  
Vol 05 (02) ◽  
pp. 1550013 ◽  
Author(s):  
J. Pokorný ◽  
I. Rafalovskyi ◽  
I. Gregora ◽  
F. Borodavka ◽  
M. Savinov ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Single Crystals ◽  
Scattered Light ◽  
Epitaxial Thin Films ◽  
Ferroelectric State ◽  
Relaxor State ◽  
Structural Differences ◽  
Scattering Study ◽  
Polarized Raman

This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc 0.5 Nb 0.5 O 3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

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